著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Muto Akiyoshi and Ohji Hiroshi and Maeda Takeshi and Torii Kazuyoshi and Kitajima Hiroshi,Ni-Salicided Poly-Si/poly-SiGe-Layered Gate Technology for 65-nm-node CMOSFETs,Japanese Journal of Applied Physics,00214922,The Japan Society of Applied Physics,2004,43,4B,1773-1777,https://cir.nii.ac.jp/crid/1390001206263548160,https://doi.org/10.1143/jjap.43.1773