著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Matsunami Hiroyuki,Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices,Japanese Journal of Applied Physics,00214922,The Japan Society of Applied Physics,2004,43,10,6835-6847,https://cir.nii.ac.jp/crid/1390001206263754368,https://doi.org/10.1143/jjap.43.6835