Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Sadoh Taizoh and Matsuura Ryo and Ninomiya Masaharu and Nakamae Masahiko and Enokida Toyotsugu and Hagino Hiroyasu and Miyao Masanobu,Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator,Japanese Journal of Applied Physics,00214922,The Japan Society of Applied Physics,2005,44,4B,2357-2360,https://cir.nii.ac.jp/crid/1390001206264680064,https://doi.org/10.1143/jjap.44.2357