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Anomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman Scattering
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- Yamazaki Ken-ichi
- Department of Electronics, Faculty of Engineering, Kobe University
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- Yamamoto Keiichi
- Department of Electronics, Faculty of Engineering, Kobe University
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- Abe Kenji
- Department of Electronics, Faculty of Engineering, Kobe University
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- Yamada Masayoshi
- Department of Electronics, Faculty of Engineering, Kobe University
Bibliographic Information
- Published
- 1981
- DOI
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- 10.1143/jjap.20.l299
- Publisher
- The Japan Society of Applied Physics
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Description
Raman scattering measurements have been made in silicon-on-sapphire (SOS) annealed by irradiation of Q-switched ruby laser light. It is found that Raman signals from the optic mode show downward shifts of 4 to 5.5 cm−1 compared with the Raman shift in unstressed single crystal silicon, and that large tensile stress exists reaching 10–13.7 kbar in the recrystallized SOS. The origin of this anomalous stress is discussed on the basis of the laser annealing models that have been proposed to date.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 20 (4), L299-L302, 1981
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390001206270093184
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- NII Article ID
- 110003981939
- 210000021440
- 130003400612
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- NII Book ID
- AA00690800
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- ISSN
- 13474065
- 00214922
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed
