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- KURITA Kazunari
- Technology Division, Advanced Evaluation & Technology Development Department, SUMCO Corporation
Bibliographic Information
- Other Title
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- シリコンウェーハのゲッタリング技術の進展
- シリコンウェーハ ノ ゲッタリング ギジュツ ノ シンテン
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Description
<p>We demonstrate the progress of gettering technology for silicon wafers. Gettering technology has been progressing for the control of contamination due to heavy metal impurities during the silicon semiconductor device processing and for the improvement of device yield.</p><p>In recent years, CMOS imaging devices have been widely used for mobile communication devices such as smartphones and tablets. However, CMOS imaging device performance is dramatically influenced by metal impurity contamination in the device process. Thus, it is extremely important to study the influence of metal impurities on device performance and to develop metal impurity gettering technology.</p><p>In this article, we report the current status of gettering technology trends for advanced CCD/CMOS imagers. In addition, we introduce our new proximity gettering technology for high sensitivity CCD/CMOS imagers by using a carbon cluster ion irradiation technique.</p>
Journal
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- Oyo Buturi
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Oyo Buturi 84 (7), 628-633, 2015-07-10
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390001277359083008
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- NII Article ID
- 130007718759
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- NII Book ID
- AN00026679
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- ISSN
- 21882290
- 03698009
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- NDL BIB ID
- 026598261
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- CiNii Articles
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- Abstract License Flag
- Disallowed