A complete set of 12 different dissociated states of basal-plane dislocation loops in 4H-SiC has been derived from experimental observations and crystallographic space group discussion. We have observed dissociated states of dislocations in 4H-SiC power devices using synchrotron X-ray Berg-Barrett topography, and analysis results are summarized. The arrangement of the results is used to discuss the shapes of Shockley-type stacking faults which were generated by recombination enhanced dislocation glide. The list of the dissociated states of basal-plane dislocation loops is useful also for the analysis of dislocation structures in hexagonal lattice.
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