Progress of Extreme Ultraviolet (EUV) Source Development for Micro-Lithography
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- HIGASHIGUCHI Takeshi
- Graduate School of Engineering, Utsunomiya University
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- FUJIOKA Shinsuke
- Institute of Laser Engineering, Osaka University
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- SUNAHARA Atsushi
- Institute for Laser Technology
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- YANAGIDA Tatsuya
- Gigaphoton Inc.
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- MIZOGUCHI Hakaru
- Gigaphoton Inc.
Bibliographic Information
- Other Title
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- EUV露光光源の研究開発の現状
- EUV ロコウ コウゲン ノ ケンキュウ カイハツ ノ ゲンジョウ
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Description
Semiconductor high volume manufacturing (HVM) was expected to start from 2012. However now a delay of around three years is expected, due to challenges in the development of high power EUV light sources. Also recent M&A activity is very aggressive. Since 2003, we have been developing the CO2- Sn-LPP EUV light source, which is the most promising solution as the 13.5 nm high power light source for HVM EUVL. We have made remarkable progress on EUV source development, and we are seeing hopeful prospects. We will report latest engineering data from our test tools
Journal
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- The Review of Laser Engineering
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The Review of Laser Engineering 42 (1), 14-, 2014
The Laser Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390004222614187904
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- NII Article ID
- 130007897471
- 40019950835
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- NII Book ID
- AN00255326
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- ISSN
- 13496603
- 03870200
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- NDL BIB ID
- 025162567
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- KAKEN
- OpenAIRE
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- Abstract License Flag
- Disallowed
