{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390009142390959360.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.5104/jiep.jiep-d-21-00007"}},{"identifier":{"@type":"HDL","@value":"http://hdl.handle.net/10228/0002001465"}},{"identifier":{"@type":"URI","@value":"https://kyutech.repo.nii.ac.jp/records/2001465"}},{"identifier":{"@type":"NDL_BIB_ID","@value":"031932003"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/031932003"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I031932003"}},{"identifier":{"@type":"URI","@value":"https://www.jstage.jst.go.jp/article/jiep/25/1/25_JIEP-D-21-00007/_pdf"}},{"identifier":{"@type":"NAID","@value":"130008138987"}}],"resourceType":"学術雑誌論文(journal article)","dc:title":[{"@language":"en","@value":"Experimental Evaluation of Parasitic Bipolar Effects and Mechanical Stress Effects in SOI-Power-MOSFETs"},{"@language":"ja","@value":"SOI－パワーMOSFETにおける寄生バイポーラ効果と機械的応力効果の実験的評価"},{"@language":"ja-Kana","@value":"SOI-パワー MOSFET ニ オケル キセイ バイポーラ コウカ ト キカイテキ オウリョク コウカ ノ ジッケンテキ ヒョウカ"}],"dc:language":"ja","description":[{"type":"abstract","notation":[{"@language":"en","@value":"<p>This paper reports on an experimental evaluation of mechanical stress effects in SOI (Silicon on Insulator) power devices. In particular, this study focuses on the interaction of parasitic bipolar effects which are unique physical phenomenon of SOI-type devices. The electrical characteristics of SOI-power-nMOSFETs (power n-type Metal-Oxide-Semiconductor Field-effect-transistors) under mechanical loading are measured using a four-point bending method. It is demonstrated that the parasitic bipolar effects may accelerate the electrical variation induced by the mechanical stress effects. In addition, the experimental results show the following:</p><p>• There may be a load direction dependence in the drain conductance change under the parasitic bipolar region.</p><p>• Gate-length dependence is not clarified.</p>"},{"@language":"ja","@value":"<p>本研究では，SOI－パワーMOSFETにおける寄生バイポーラ効果と機械的応力効果を実験的に評価し，それらの相互作用を明らかにすることを目的とした。機械的負荷下での電気特性変動は，4点曲げ試験により評価した。ドレイン電圧-ドレイン電流特性では，ゲート電圧が小さいほど寄生バイポーラ効果によるドレイン電流の増加が顕著に見られた。ピエゾ効果のみによる電流特性変動領域と寄生バイポーラ効果が発現する領域との比較から，寄生バイポーラ効果が機械的負荷に起因する電気特性変動を加速させることが示唆された。また，電流方向に対する負荷方向依存性の存在が示唆されたが，ゲート長さ依存性は明確にならなかった。</p>"}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410009142390959360","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000414835918"}],"foaf:name":[{"@language":"en","@value":"Shiotsuka Koki"},{"@language":"ja","@value":"塩塚 航生"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"鹿児島大学大学院理工学研究科"},{"@language":"en","@value":"Graduate School of Science and Engineering, Kagoshima University"}]},{"@id":"https://cir.nii.ac.jp/crid/1410009142390959363","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000414835919"}],"foaf:name":[{"@language":"en","@value":"Koganemaru Masaaki"},{"@language":"ja","@value":"小金丸 正明"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"鹿児島大学大学院理工学研究科"},{"@language":"en","@value":"Graduate School of Science and Engineering, Kagoshima University"}]},{"@id":"https://cir.nii.ac.jp/crid/1420001326206357120","@type":"Researcher","personIdentifier":[{"@type":"KAKEN_RESEARCHERS","@value":"10577282"},{"@type":"NRID","@value":"1000010577282"},{"@type":"NRID","@value":"9000315138710"},{"@type":"NRID","@value":"9000412078288"},{"@type":"NRID","@value":"9000402029223"},{"@type":"NRID","@value":"9000404102368"},{"@type":"NRID","@value":"9000258155501"},{"@type":"NRID","@value":"9000107356301"},{"@type":"NRID","@value":"9000258167174"},{"@type":"NRID","@value":"9000403288532"},{"@type":"NRID","@value":"9000045463548"},{"@type":"NRID","@value":"9000408681561"},{"@type":"NRID","@value":"9000414835920"},{"@type":"NRID","@value":"9000401775894"},{"@type":"NRID","@value":"9000401692229"},{"@type":"NRID","@value":"9000107334462"},{"@type":"NRID","@value":"9000403833680"},{"@type":"NRID","@value":"9000402022303"},{"@type":"NRID","@value":"9000238255186"},{"@type":"NRID","@value":"9000401758946"},{"@type":"NRID","@value":"9000401761800"},{"@type":"NRID","@value":"9000309576791"},{"@type":"NRID","@value":"9000409360707"},{"@type":"NRID","@value":"9000402035694"},{"@type":"NRID","@value":"9000025086407"},{"@type":"NRID","@value":"9000004883829"},{"@type":"NRID","@value":"9000412078278"},{"@type":"NRID","@value":"9000403784821"},{"@type":"NRID","@value":"9000401696266"},{"@type":"NRID","@value":"9000248236059"},{"@type":"NRID","@value":"9000412193413"},{"@type":"NRID","@value":"9000025065900"},{"@type":"NRID","@value":"9000408630558"},{"@type":"NRID","@value":"9000408630561"},{"@type":"NRID","@value":"9000401763987"},{"@type":"NRID","@value":"9000401715669"},{"@type":"NRID","@value":"9000408630555"},{"@type":"NRID","@value":"9000412001968"},{"@type":"NRID","@value":"9000377378322"},{"@type":"NRID","@value":"9000238255191"},{"@type":"NRID","@value":"9000412078284"},{"@type":"NRID","@value":"9000403833677"},{"@type":"NRID","@value":"9000025061151"},{"@type":"NRID","@value":"9000025126882"},{"@type":"NRID","@value":"9000004737652"},{"@type":"NRID","@value":"9000403833683"},{"@type":"NRID","@value":"9000402041866"},{"@type":"RESEARCHMAP","@value":"https://researchmap.jp/smatsu_0519"}],"foaf:name":[{"@language":"en","@value":"Matsumoto Satoshi"},{"@language":"ja","@value":"松本 聡"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"九州工業大学大学院工学研究院"},{"@language":"en","@value":"Graduate School of Engineering, Kyushu Institute of Technology"}]},{"@id":"https://cir.nii.ac.jp/crid/1410009142390959361","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000414835921"}],"foaf:name":[{"@language":"en","@value":"Ikeda Toru"},{"@language":"ja","@value":"池田 徹"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"鹿児島大学大学院理工学研究科"},{"@language":"en","@value":"Graduate School of Science and Engineering, Kagoshima University"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"13439677"},{"@type":"EISSN","@value":"1884121X"},{"@type":"NDL_BIB_ID","@value":"000000103713"},{"@type":"ISSN","@value":"13439677"},{"@type":"LISSN","@value":"13439677"},{"@type":"NCID","@value":"AA11231565"}],"prism:publicationName":[{"@language":"ja","@value":"エレクトロニクス実装学会誌"},{"@language":"en","@value":"Journal of The Japan Institute of Electronics Packaging"},{"@language":"ja","@value":"エレクトロニクス実装学会誌"},{"@language":"en","@value":"Journal of Japan Institute of Electronics Packaging"},{"@language":"en","@value":"Erekutoronikusu Jisso Gakkaishi"}],"dc:publisher":[{"@language":"en","@value":"The Japan Institute of Electronics Packaging"},{"@language":"ja","@value":"一般社団法人エレクトロニクス実装学会"}],"prism:publicationDate":"2022-01-01","prism:volume":"25","prism:number":"1","prism:startingPage":"103","prism:endingPage":"110"},"reviewed":"false","url":[{"@id":"https://kyutech.repo.nii.ac.jp/records/2001465"},{"@id":"http://id.ndl.go.jp/bib/031932003"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I031932003"},{"@id":"https://www.jstage.jst.go.jp/article/jiep/25/1/25_JIEP-D-21-00007/_pdf"}],"availableAt":"2022-01-01","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=SOI","dc:title":"SOI"},{"@id":"https://cir.nii.ac.jp/all?q=MOSFET","dc:title":"MOSFET"},{"@id":"https://cir.nii.ac.jp/all?q=4-point%20Bending","dc:title":"4-point Bending"},{"@id":"https://cir.nii.ac.jp/all?q=Mechanical%20Stress%20Effects","dc:title":"Mechanical Stress Effects"},{"@id":"https://cir.nii.ac.jp/all?q=Parasitic%20Bipolar%20Effects","dc:title":"Parasitic Bipolar Effects"}],"dcterms:subject":[{"subjectScheme":"Other","notation":[{"@language":"en","@value":"SOI"}]},{"subjectScheme":"Other","notation":[{"@language":"en","@value":"MOSFET"}]},{"subjectScheme":"Other","notation":[{"@language":"en","@value":"4-point Bending"}]},{"subjectScheme":"Other","notation":[{"@language":"en","@value":"Mechanical Stress Effects"}]},{"subjectScheme":"Other","notation":[{"@language":"en","@value":"Parasitic Bipolar Effects"}]}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050282810678211584","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Experimental Study of Uniaxial-Stress Effects on DC Characteristics of nMOSFETs"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003446855558400","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially 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