格子不整合系InGaAs 太陽電池における転位すべり面の向きが光励起キャリアの再結合に与える影響

DOI 機関リポジトリ 機関リポジトリ (HANDLE) オープンアクセス

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  • Effect of Directions of Dislocation Glide Planes on Photoexcited Carrier Recombination Process in Lattice-mismatched InGaAs Solar Cells

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Lattice-mismatched solar cells are known to have high conversion efficiency. However, their open-circuit voltages (VOC) are not uniformly distributed within a wafer due to the preferential glide plane of β dislocations. Furthermore, the effect of dislocations on the carrier recombination process is still under discussion. We investigated two types of InGaAs solar cells with the InGaP step-graded buffer layers grown on the vicinal GaAs substrate. The first cell showed a high VOC (HighV), and the preferential glide plane of β dislocations was well controlled using the vicinal substrate. The second cell had a low VOC (LowV), where the preferential glide planes of β dislocations were nonuniformly distributed within the cell due to the InGaP ordering effect. In this study, laser heterodyne photothermal displacement mappings, microwave photoconductivity decay mappings, and photoluminescence measurements were performed to discuss carrier recombination properties. In the HighV cell, almost uniform signal distributions were observed. On the other hand, the observed signals in the LowV cell were nonuniformly distributed. We also found that the obtained results of nonuniformity correspond to the distribution of preferential glide planes of β dislocations. These results indicate that the VOC reduction strongly depends on the direction of the preferential glide plane of β dislocations.

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