{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390282679584568320.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1541/ieejeiss.130.920"}},{"identifier":{"@type":"NDL_BIB_ID","@value":"10693964"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/10693964"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I10693964"}},{"identifier":{"@type":"URI","@value":"http://www.jstage.jst.go.jp/article/ieejeiss/130/6/130_6_920/_pdf"}},{"identifier":{"@type":"NAID","@value":"10026382599"}}],"dc:title":[{"@language":"en","@value":"Anisotropic Transformation of 4H-SiC Etching Shapes by High Temperature Annealing"},{"@language":"ja","@value":"高温アニールによる４Ｈ－ＳｉＣエッチング形状変形の異方性"},{"@language":"ja-Kana","@value":"コウオン アニール ニ ヨル 4H SiC エッチング ケイジョウ ヘンケイ ノ イホウセイ"}],"dc:language":"ja","description":[{"type":"abstract","notation":[{"@language":"en","@value":"We investigated transformation of 4H-SiC etching shapes by high temperature annealing. Although the etching mask was circular, the etched shape resulted in a hexagon, dodecagon, or octadecagon, depending on the etching area size. A hexagon was transformed into a dodecagon along with the high temperature annealing, and a dodecagon was transformed into an octadecagon.Hexagon as well as dodecagon designed with different edge directions undergo different transformation by the annealing, owing to common preference of crystallographic faces. An edge corresponding to one of the {1-10x} faces appears as a straight line and seems most preferred. Edges corresponding to the {11-2x} faces also appear in a curvy feature, suggesting to be second most preferred. Faceted structures (bunching) were observed clearly on the {1-10x} faces but faintly on the {11-2x} faces. Therefore, it is necessary to design the shapes and their directions in an actual device in consideration of the transformation by annealing."}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410853646000696580","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000017381733"}],"foaf:name":[{"@language":"en","@value":"Kawada Yasuyuki"},{"@language":"ja","@value":"河田 泰之"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Fuji Electric Holdings Co., Ltd."},{"@language":"ja","@value":"富士電機ホールディングス（株）"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282679576775169","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000005408907"},{"@type":"NRID","@value":"9000415158525"}],"foaf:name":[{"@language":"en","@value":"Tawara Takeshi"},{"@language":"ja","@value":"俵 武志"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Fuji Electric Holdings Co., Ltd."},{"@language":"ja","@value":"富士電機ホールディングス（株）"}]},{"@id":"https://cir.nii.ac.jp/crid/1410853646000696576","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000017381735"}],"foaf:name":[{"@language":"en","@value":"Nakamura Shun-ichi"},{"@language":"ja","@value":"中村 俊一"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Fuji Electric Holdings Co., Ltd."},{"@language":"ja","@value":"富士電機ホールディングス（株）"}]},{"@id":"https://cir.nii.ac.jp/crid/1410853646000696579","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000017381736"}],"foaf:name":[{"@language":"en","@value":"Gotoh Masahide"},{"@language":"ja","@value":"後藤 雅秀"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"富士電機ホールディングス（株）"},{"@language":"en","@value":"Fuji Electric Holdings Co., Ltd."}]},{"@id":"https://cir.nii.ac.jp/crid/1410290696117838593","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000002114844"}],"foaf:name":[{"@language":"en","@value":"Iwanuro Noruyuki"},{"@language":"ja","@value":"岩室 憲幸"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Fuji Electric Holdings Co., Ltd."},{"@language":"ja","@value":"富士電機ホールディングス（株）"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"03854221"},{"@type":"LISSN","@value":"03854221"},{"@type":"EISSN","@value":"13488155"},{"@type":"NDL_BIB_ID","@value":"000000015707"},{"@type":"ISSN","@value":"03854221"},{"@type":"NCID","@value":"AN10065950"}],"prism:publicationName":[{"@language":"en","@value":"IEEJ Transactions on Electronics, Information and Systems"},{"@language":"ja","@value":"電気学会論文誌Ｃ（電子・情報・システム部門誌）"},{"@language":"ja","@value":"電気学会論文誌．　Ｃ"},{"@value":"電気学会論文誌. C"},{"@language":"en","@value":"IEEJ Trans. EIS"},{"@language":"ja","@value":"電学論Ｃ"},{"@language":"en","@value":"IEEJ Trans.EIS"},{"@language":"ja","@value":"電気学会論文誌．　Ｃ"}],"dc:publisher":[{"@language":"en","@value":"The Institute of Electrical Engineers of Japan"},{"@language":"ja","@value":"一般社団法人 電気学会"}],"prism:publicationDate":"2010","prism:volume":"130","prism:number":"6","prism:startingPage":"920","prism:endingPage":"923"},"reviewed":"false","url":[{"@id":"http://id.ndl.go.jp/bib/10693964"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I10693964"},{"@id":"http://www.jstage.jst.go.jp/article/ieejeiss/130/6/130_6_920/_pdf"}],"availableAt":"2010","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=4H-SiC","dc:title":"4H-SiC"},{"@id":"https://cir.nii.ac.jp/all?q=dry%20etching","dc:title":"dry etching"},{"@id":"https://cir.nii.ac.jp/all?q=high-temperature%20annealing","dc:title":"high-temperature annealing"},{"@id":"https://cir.nii.ac.jp/all?q=transformation","dc:title":"transformation"},{"@id":"https://cir.nii.ac.jp/all?q=4H-SiC","dc:title":"4H-SiC"},{"@id":"https://cir.nii.ac.jp/all?q=%E3%83%89%E3%83%A9%E3%82%A4%E3%82%A8%E3%83%83%E3%83%81%E3%83%B3%E3%82%B0","dc:title":"ドライエッチング"},{"@id":"https://cir.nii.ac.jp/all?q=%E9%AB%98%E6%B8%A9%E3%82%A2%E3%83%8B%E3%83%BC%E3%83%AB","dc:title":"高温アニール"},{"@id":"https://cir.nii.ac.jp/all?q=%E5%A4%89%E5%BD%A2","dc:title":"変形"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1390001206264720000","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Investigation of Shape Transformation of Silicon Trenches during Hydrogen Annealing"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001277360594688","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Nanoscale-architectural control of silicon microstructures by high-temperature annealing in hydrogen ambient"},{"@language":"ja","@value":"水素雰囲気中高温アニール処理によるシリコン微細構造のナノスケール制御"},{"@language":"ja-Kana","@value":"スイソ フンイキチュウ コウオン アニール ショリ ニ ヨル シリコン ビサイ コウゾウ ノ ナノスケール セイギョ"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681225276672","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Theory of Semiconductor Superjunction Devices."},{"@language":"ja-Kana","@value":"Theory of Semiconductor Superjunction D"}]},{"@id":"https://cir.nii.ac.jp/crid/1520853832991357952","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@value":"Shape control and roughness reduction of SiC trenches by high-temperature annealing"},{"@language":"ja-Kana","@value":"Shape control and roughness reduction of SiC trenches by high temperature annealing"}]},{"@id":"https://cir.nii.ac.jp/crid/1520853833928170624","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@value":"Shape transformation of 4H-SiC microtrenches by hydrogen annealing"},{"@language":"ja-Kana","@value":"Shape transformation of 4H SiC microtrenches by hydrogen annealing"}]},{"@id":"https://cir.nii.ac.jp/crid/1570009751088457984","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"The Field Stop IGBT (FS IGBT)-A New Power Device Concept with a Great Improvement Potential"}]}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:0035141034"},{"@type":"NDL_SEARCH","@value":"oai:ndlsearch.ndl.go.jp:R000000004-I10693964"},{"@type":"CROSSREF","@value":"10.1541/ieejeiss.130.920"},{"@type":"CIA","@value":"10026382599"}]}