ホットホール注入によるトンネルゲート酸化膜の絶縁性劣化

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タイトル別名
  • Degradation of direct-tunneling gate oxide under hot hole injection
  • ホットホール チュウニュウ ニ ヨル トンネルゲート サンカ マク ノ ゼツエンセイ レッカ

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説明

The degradation of ultra-thin SiO2 films accompanied by the hole direct tunneling is investigated using a substrate hot hole (SHH) injection technique. Hot holes from the substrate as well as cold holes in the inversion layer are injected into the gate oxides in p-channel MOSFETs with pp+ poly-Si gates, while the gate bias is kept low enough to avoid the simultaneous electron injection from the gate. During the SHH stress, in contrast to the case of thicker oxide films, a strong correlation is observed between the oxide film dagradation and the injected hole energy, whereas no degradation occures due to the hole direct tunneling from the inversion layer. These experimental findings indicate the existence of threshold energy for trap creation process, which has been predicted by the theoretical study of hole-injection-induced structural transformastion of oxygen vacancy in SiO2.

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