書誌事項
- タイトル別名
-
- Stress Measurement of Single Crystal Using X-ray Diffraction Technique
- Xセン カイセツホウ ニ ヨル タンケッショウ オウリョク ソクテイ
この論文をさがす
説明
It is very important to know the residual stress states in a single crystal since the residual stresses affects the mechanical properties or functionality of some devices such as semiconductors or micromachines. X-ray diffraction technique is non destructive and detached method to know the residual stresses of crystalline materials in various atmospheres. Using a position sensitive proportional counter (PSPC) as an X-ray detector, it is very easy to obtain the reasonable diffraction profile of single crystal. In the case of using PSPC, crystal oscillation is required to obtain a perfect diffraction profile. In this paper, we explained the stress measurement technique for single crystal by using PSPC and the principle for stress measurement of single crystal with unknown stress-free lattice parameter.
収録刊行物
-
- 実験力学
-
実験力学 4 (2), 93-99, 2004
日本実験力学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282680165368832
-
- NII論文ID
- 10013274269
-
- NII書誌ID
- AA11822914
-
- ISSN
- 18844219
- 13464930
-
- NDL書誌ID
- 7026747
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可