著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Chen Chengying and Sun Hongbin and Shen Haihua and Zhang Feng,A 128 Kb HfO<sub>2</sub> ReRAM with Novel Double-Reference and Dynamic-Tracking scheme for write yield improvement,IEICE Electronics Express,1349-2543,一般社団法人 電子情報通信学会,2016,13,6,20160061-20160061,https://cir.nii.ac.jp/crid/1390282680190260352,https://doi.org/10.1587/elex.13.20160061