{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390282680489751680.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.14723/tmrsj.38.17"}},{"identifier":{"@type":"COI","@value":"1:CAS:528:DC%2BC3sXmslWnt7o%3D"}},{"identifier":{"@type":"URI","@value":"https://www.jstage.jst.go.jp/article/tmrsj/38/1/38_17/_pdf"}},{"identifier":{"@type":"NAID","@value":"130005004184"}}],"dc:title":[{"@language":"en","@value":"Thermoelectric Properties of Na-doped Mg<sub>2</sub>Si<sub>0.25</sub>Sn<sub>0.75</sub>"}],"dc:language":"en","description":[{"type":"abstract","notation":[{"@language":"en","@value":"We have investigated the thermoelectric properties of Na-doped Mg<sub>2</sub>Si<sub>0.25</sub>Sn<sub>0.75</sub> solid solutions prepared by liquid-solid reaction and hot-pressing methods. Na doping was carried out by mixing sodium acetate (CH<sub>3</sub>COONa) into the starting materials Mg (nominal purity: 99.9 %), Sn (99.999 %) granules, and Si powder (99.9999 %). The Na-doped samples had p-type conductivity with positive signs of Seebeck and Hall coefficients. Furthermore, hole concentrations increased rapidly with an increase in the amount of Na doping. These results revealed that the Na atoms acted as acceptors in Mg<sub>2</sub>Si<sub>0.25</sub>Sn<sub>0.75</sub>. The Seebeck coefficient of Na-doped samples showed positive values between 300 and 750 K. A maximum power factor of 0.88 × 10<sup>-3</sup> WmK<sup>-2</sup> was observed for the Mg<sub>2</sub>Na<sub>0.020</sub>Si<sub>0.25</sub>Sn<sub>0.75</sub> sample at 500 K. The dimensionless figure of merit <i>ZT</i> reached 0.17 at 450 K for all Na-doped samples."}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410282680489751809","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283715771"}],"foaf:name":[{"@language":"en","@value":"Udono H."}],"jpcoar:affiliationName":[{"@language":"en","@value":"Graduate School of Sci. and Eng., Ibaraki Univ."}]},{"@id":"https://cir.nii.ac.jp/crid/1410282680489751680","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283715773"}],"foaf:name":[{"@language":"en","@value":"Kumagai S."}],"jpcoar:affiliationName":[{"@language":"en","@value":"Mitsuba Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282680489751808","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283715772"}],"foaf:name":[{"@language":"en","@value":"Fujiu H."}],"jpcoar:affiliationName":[{"@language":"en","@value":"Mitsuba Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282680489751811","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283715770"}],"foaf:name":[{"@language":"en","@value":"Isoda Y."}],"jpcoar:affiliationName":[{"@language":"en","@value":"National Institute for Material Science"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282680489751812","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283715774"}],"foaf:name":[{"@language":"en","@value":"Shinohara Y."}],"jpcoar:affiliationName":[{"@language":"en","@value":"National Institute for Material Science"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282680489751810","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283715769"}],"foaf:name":[{"@language":"en","@value":"Tada S."}],"jpcoar:affiliationName":[{"@language":"en","@value":"Mitsuba Corporation"},{"@language":"en","@value":"Graduate School of Sci. and Eng., Ibaraki Univ."}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"13823469"},{"@type":"EISSN","@value":"21881650"}],"prism:publicationName":[{"@language":"en","@value":"Transactions of the Materials Research Society of Japan"},{"@language":"ja","@value":"Transactions of the Materials Research Society of Japan"},{"@language":"en","@value":"Trans. Mat. Res. Soc. Japan"}],"dc:publisher":[{"@language":"en","@value":"The Materials Research Society of Japan"},{"@language":"ja","@value":"一般社団法人 日本MRS"}],"prism:publicationDate":"2013","prism:volume":"38","prism:number":"1","prism:startingPage":"17","prism:endingPage":"20"},"reviewed":"false","dcterms:accessRights":"http://purl.org/coar/access_right/c_abf2","url":[{"@id":"https://www.jstage.jst.go.jp/article/tmrsj/38/1/38_17/_pdf"}],"availableAt":"2013","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=Mg%3Csub%3E2%3C/sub%3ESiSn","dc:title":"Mg<sub>2</sub>SiSn"},{"@id":"https://cir.nii.ac.jp/all?q=ecofriendly%20semiconductor","dc:title":"ecofriendly semiconductor"},{"@id":"https://cir.nii.ac.jp/all?q=thermoelectric%20properties","dc:title":"thermoelectric properties"},{"@id":"https://cir.nii.ac.jp/all?q=sodium","dc:title":"sodium"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360861292591891456","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"New semiconductor components"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388845257857280","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Thermoelectric Properties of Sb-doped Mg2Si0.5Sn0.5"}]}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:1002659400"},{"@type":"CROSSREF","@value":"10.14723/tmrsj.38.17"},{"@type":"CIA","@value":"130005004184"},{"@type":"OPENAIRE","@value":"doi_dedup___::7bbc17e896309f6d58326069e5c22c6f"}]}