{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390282680489798272.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.14723/tmrsj.34.291"}},{"identifier":{"@type":"COI","@value":"1:CAS:528:DC%2BD1MXhtVOms7jJ"}},{"identifier":{"@type":"NAID","@value":"130005003979"}}],"dc:title":[{"@language":"en","@value":"Theoretical Study on Leakage Current in MOS with High-K Dielectric Stack: Effects of In-plane-Longitudinal Kinetic Energy Coupling and Anisotropic Masses"}],"dc:language":"ja","description":[{"type":"abstract","notation":[{"@language":"en","@value":"A model of leakage current in Al/HfO<sub>2</sub>/SiO<sub>2</sub>/Si MOS (metal-oxide-semiconductor) capacitors is given by adopting the tunnel current model in SiGe-based heterojunction bipolar transistors. The velocity of an electron in the metal gate, which originates from the coupling between longitudinal and transverse (in-plane) kinetic energies, and the anisotropic mass of the substrate were included in the leakage current model. It was found that the leakage current obtained by including the gate electron velocity is lower than that calculated without the coupling effect and the leakage current decreases with an increasing gate electron velocity. However, the leakage current is not significantly influenced by the silicon substrate orientation. If a measured leakage current in the high-K dielectric stack MOS with Si(100) substrate were much higher than that in the MOS with Si(111) as observed in the conventional MOS, then the gate electron phase velocity in the latter would be higher. A small increase of the equivalent oxide thickness (EOT) of HfO<sub>2</sub> will decrease the tunnel current appreciably and tunnel current oscillations become visible as the EOT becomes thicker. Oscillatory behavior of the tunnel current is due to resonance states in the quantum well formed in high-K dielectric stack at high electric fields."}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410282680489798400","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283714835"}],"foaf:name":[{"@language":"en","@value":"Khairurrijal"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282680489798274","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283714836"}],"foaf:name":[{"@language":"en","@value":"Noor Fatimah A."}],"jpcoar:affiliationName":[{"@language":"en","@value":"Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282680489798273","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283714837"}],"foaf:name":[{"@language":"en","@value":"Abdullah Mikrajuddin"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282680489798275","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283714838"}],"foaf:name":[{"@language":"en","@value":"Sukirno"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282680489798272","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000283714839"}],"foaf:name":[{"@language":"en","@value":"Miyazaki Seiichi"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Graduate School of Advanced Sciences of Matter, Hiroshima University"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"13823469"},{"@type":"EISSN","@value":"21881650"}],"prism:publicationName":[{"@language":"en","@value":"Transactions of the Materials Research Society of Japan"},{"@language":"ja","@value":"Transactions of the Materials Research Society of Japan"},{"@language":"en","@value":"Trans. Mat. Res. Soc. Japan"}],"dc:publisher":[{"@language":"en","@value":"The Materials Research Society of Japan"},{"@language":"ja","@value":"一般社団法人 日本MRS"}],"prism:publicationDate":"2009","prism:volume":"34","prism:number":"2","prism:startingPage":"291","prism:endingPage":"295"},"reviewed":"false","dcterms:accessRights":"http://purl.org/coar/access_right/c_abf2","availableAt":"2009","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=anisotropic%20mass","dc:title":"anisotropic mass"},{"@id":"https://cir.nii.ac.jp/all?q=electron%20velocity","dc:title":"electron velocity"},{"@id":"https://cir.nii.ac.jp/all?q=high-K%20dielectric","dc:title":"high-K dielectric"},{"@id":"https://cir.nii.ac.jp/all?q=leakage%20current","dc:title":"leakage current"},{"@id":"https://cir.nii.ac.jp/all?q=MOS%20capacitor","dc:title":"MOS capacitor"}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:0033477043"},{"@type":"CROSSREF","@value":"10.14723/tmrsj.34.291"},{"@type":"CIA","@value":"130005003979"},{"@type":"OPENAIRE","@value":"doi_dedup___::7a49c25ba64a734ac49db874e2a2cd32"}]}