著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Stoyanov S. and Metois J. J. and Tonchev V.,"解説 Electromigration of Si Adatoms on Si Surface--A key to understanding the step bunching instabilities during sublimation, equilibrium and MBE growth",日本結晶成長学会誌,03856275,日本結晶成長学会,2002,29,1,17-19,https://cir.nii.ac.jp/crid/1390282680873431168,https://doi.org/10.19009/jjacg.29.1_17