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Influence of Fe Contamination in Czochralski-Grown Silicon Single Crystals on LSI-Yield Related Crystal Quality Characteristics.
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- Miyazaki Morimasa
- Silicon Technology Center, Sumitomo Sitix Corporation, Kohoku, Kishima, Saga 849–05, Japan
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- Miyazaki Sumio
- Silicon Technology Center, Sumitomo Sitix Corporation, Kohoku, Kishima, Saga 849–05, Japan
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- Kitamura Takafumi
- Silicon Technology Center, Sumitomo Sitix Corporation, Kohoku, Kishima, Saga 849–05, Japan
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- Aoki Toshihiko
- Silicon Technology Center, Sumitomo Sitix Corporation, Kohoku, Kishima, Saga 849–05, Japan
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- Nakashima Yutaka
- Silicon Technology Center, Sumitomo Sitix Corporation, Kohoku, Kishima, Saga 849–05, Japan
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- Hourai Masataka
- Silicon Technology Center, Sumitomo Sitix Corporation, Kohoku, Kishima, Saga 849–05, Japan
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- Shigematsu Tatsuhiko
- Silicon Technology Center, Sumitomo Sitix Corporation, Kohoku, Kishima, Saga 849–05, Japan
Bibliographic Information
- Published
- 1995
- DOI
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- 10.1143/jjap.34.409
- Publisher
- The Japan Society of Applied Physics
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Description
Influence of Fe contamination in CZ-grown silicon single crystal on oxidation-induced stacking fault (OSF) generation density, carrier recombination and generation lifetimes, and gate oxide integrity (GOI) yield characteristics was experimentally investigated. Two Fe-doped silicon ingots were grown and tested. Concentration of Fe-B ([Fe-B]) in these silicon ingots measured by deep level transient spectroscopy (DLTS) was about 5× 1011 cm-3 and 5× 1012 cm-3, respectively. OSF density generated by three-step annealing showed dependence on [Fe-B]. Carrier recombination lifetime (τ r) showed good correlation with [Fe-B], and a quantitative relationship was established. OSF density after one-step annealing, carrier generation lifetime (τ g) and GOI yield were not so dependent on [Fe-B].
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 34 (2A), 409-413, 1995
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390282681222328448
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- NII Article ID
- 210000037654
- 110003904110
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- NII Book ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed
