{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390282681223453056.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1143/jjap.34.5233"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.34.5233"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.34.5233/pdf"}},{"identifier":{"@type":"NAID","@value":"110003955224"}},{"identifier":{"@type":"NAID","@value":"30021829178"}},{"identifier":{"@type":"NAID","@value":"210000037923"}},{"identifier":{"@type":"NAID","@value":"130004522039"}}],"dc:title":[{"@language":"en","@value":"Characteristics of Bismuth Layered SrBi2Ta2O9 Thin-Film Capacitors and Comparison with Pb(Zr,Ti)O3."},{"@value":"Characteristics of Bismuth Layered SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin-Film Capacitors and Comparison with Pb(Zr, Ti)O<sub>3</sub>"},{"@value":"Characteristics of bismuth layered SrBi2Ta2O9 thin-film capacitors and comparison with Pb(Zr, Ti)O3, Jpn"}],"dc:language":"en","description":[{"type":"abstract","notation":[{"@language":"en","@value":"We have developed the series of thin-film bismuth layer structured ferroelectric (BLSF) materials such as SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB>, SrBi<SUB>2</SUB>Nb<SUB>2</SUB>O<SUB>9</SUB>, SrBi<SUB>4</SUB>Ti<SUB>4</SUB>O<SUB>15</SUB> and their solid solutions using metallo-organic-decomposition (MOD) spin-on coating techniques. We found that SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> is one of the best potential candidate materials for ferroelectric nonvolatile memories. The SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> thin-film capacitor had the remanent polarization (P<SUB> r+</SUB>-P<SUB> r-</SUB>) of 20 µ C/cm<SUP>2</SUP>, coercive field of 35 kV/cm and dielectric constant of 250. SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> thin film on platinum electrode has fatigue-free characteristics for up to 2× 10<SUP>11</SUP> cycles without requiring any complicated electrode system such as conductive oxide. Moreover, SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> thin film has many advantages, e.g., high signal/noise ratio of 8 at 1.2 V, low-voltage operation at as low as 1 V, long data-retention, little surface effect, superior imprint properties and low leakage current. We considered that these advantages are due to (1) less space charge and (2) the inherent domain motion."}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410282681223453056","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401651142"},{"@type":"NRID","@value":"9000258129798"}],"foaf:name":[{"@language":"en","@value":"Mihara Takashi"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Basic Research Dept., Corporate Research Division, Olympus Optical Corp., Ltd. Hachioji, Tokyo, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1410001206246742658","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000005564558"},{"@type":"NRID","@value":"9000258129824"},{"@type":"NRID","@value":"9000258127134"},{"@type":"NRID","@value":"9000401648744"},{"@type":"NRID","@value":"9000401651148"},{"@type":"NRID","@value":"9000401651143"},{"@type":"NRID","@value":"9000258129799"}],"foaf:name":[{"@language":"en","@value":"Yoshimori Hiroyuki"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Basic Research Dept., Corporate Research Division, Olympus Optical Corp., Ltd. Hachioji, Tokyo, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681223453059","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401651144"},{"@type":"NRID","@value":"9000258129800"}],"foaf:name":[{"@language":"en","@value":"Watanabe Hitoshi"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Basic Research Dept., Corporate Research Division, Olympus Optical Corp., Ltd. Hachioji, Tokyo, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681223453058","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401651145"},{"@type":"NRID","@value":"9000258129801"}],"foaf:name":[{"@language":"en","@value":"Araujo Carlos A. Paz de"}],"jpcoar:affiliationName":[{"@language":"en","@value":"University of Colorado at Colorado Springs, Colorado Springs, CO. USA and Symetrix Corp., Colorado Springs, CO., USA"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"},{"@type":"NCID","@value":"AA10457675"}],"prism:publicationName":[{"@language":"en","@value":"Japanese Journal of Applied Physics"},{"@language":"en","@value":"JPN. J. APPL. PHYS."},{"@language":"en","@value":"JJAP"}],"dc:publisher":[{"@language":"en","@value":"The Japan Society of Applied Physics"}],"prism:publicationDate":"1995","prism:volume":"34","prism:number":"9B","prism:startingPage":"5233","prism:endingPage":"5239"},"reviewed":"false","url":[{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.34.5233"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.34.5233/pdf"}],"availableAt":"1995","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=ferroelectrics","dc:title":"ferroelectrics"},{"@id":"https://cir.nii.ac.jp/all?q=thin%20film","dc:title":"thin film"},{"@id":"https://cir.nii.ac.jp/all?q=PZT","dc:title":"PZT"},{"@id":"https://cir.nii.ac.jp/all?q=BLSF","dc:title":"BLSF"},{"@id":"https://cir.nii.ac.jp/all?q=SrBi%3CSUB%3E2%3C/SUB%3ETa%3CSUB%3E2%3C/SUB%3EO%3CSUB%3E9%3C/SUB%3E","dc:title":"SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB>"},{"@id":"https://cir.nii.ac.jp/all?q=hysteresis%20loop","dc:title":"hysteresis loop"},{"@id":"https://cir.nii.ac.jp/all?q=fatigue","dc:title":"fatigue"},{"@id":"https://cir.nii.ac.jp/all?q=retention","dc:title":"retention"},{"@id":"https://cir.nii.ac.jp/all?q=signal/noise%20ratio","dc:title":"signal/noise ratio"},{"@id":"https://cir.nii.ac.jp/all?q=leakage%20current","dc:title":"leakage current"},{"@id":"https://cir.nii.ac.jp/all?q=space%20charge","dc:title":"space charge"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449890799872","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High rate capability of a BaTiO<sub>3</sub>-decorated LiCoO<sub>2</sub> cathode prepared via metal organic decomposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292620316500608","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Structural basis of ferroelectricity in the bismuth titanate 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