{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390282681226417536.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1143/jjap.38.6392"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.38.6392"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.38.6392/pdf"}},{"identifier":{"@type":"NAID","@value":"110003907578"}},{"identifier":{"@type":"NAID","@value":"210000045990"}},{"identifier":{"@type":"NAID","@value":"130004525455"}}],"dc:title":[{"@language":"en","@value":"Luminescence from the Thermally Treated Cerium Oxide on Silicon."}],"dc:language":"en","description":[{"type":"abstract","notation":[{"@language":"en","@value":"As an efficient ultra violet/blue (UVB) luminescent material compatible with Si-based optoelectronics, we introduce thermally treated cerium oxide (CeO<SUB>x</SUB>) on silicon. UVB luminescence ranging from 358 nm to 450 nm is observed at room temperature for thermally treated CeO<SUB>x</SUB> thin films. The luminescence is attributed to Ce<SUB>4.667</SUB>(SiO<SUB>4</SUB>)<SUB>3</SUB>O and Ce<SUB>2</SUB>Si<SUB>2</SUB>O<SUB>7</SUB> generated during thermal treatment."}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410282681226417538","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401683876"},{"@type":"NRID","@value":"9000005602132"},{"@type":"NRID","@value":"9000258143834"}],"foaf:name":[{"@language":"en","@value":"Choi Won Chel"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130–650, Korea"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681226417540","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401683877"},{"@type":"NRID","@value":"9000005602134"},{"@type":"NRID","@value":"9000258143835"}],"foaf:name":[{"@language":"en","@value":"Lee Ho Nyung"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130–650, Korea"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681226417539","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401683878"},{"@type":"NRID","@value":"9000005602136"},{"@type":"NRID","@value":"9000258143836"}],"foaf:name":[{"@language":"en","@value":"Kim Yong"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Department of Physics, College of Natural Sciences, DongA University, Hadan 2–Dong 840, Saha–gu, Pusan 604–714, Korea"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681226417536","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401683879"},{"@type":"NRID","@value":"9000005602138"},{"@type":"NRID","@value":"9000258143837"}],"foaf:name":[{"@language":"en","@value":"Park Hyun Min"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Materials Evaluation Center, Korea Research Institute of Standards and Science, P.O.Box 102, Yusong, Taejon 305–600, Korea"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681226417537","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401683880"},{"@type":"NRID","@value":"9000005602140"},{"@type":"NRID","@value":"9000258143838"}],"foaf:name":[{"@language":"en","@value":"Kim Eun Kyu"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130–650, Korea"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"},{"@type":"NCID","@value":"AA10457675"}],"prism:publicationName":[{"@language":"en","@value":"Japanese Journal of Applied Physics"},{"@language":"en","@value":"JPN. J. APPL. PHYS."},{"@language":"en","@value":"JJAP"}],"dc:publisher":[{"@language":"en","@value":"The Japan Society of Applied Physics"}],"prism:publicationDate":"1999","prism:volume":"38","prism:number":"11","prism:startingPage":"6392","prism:endingPage":"6393"},"reviewed":"false","url":[{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.38.6392"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.38.6392/pdf"}],"availableAt":"1999","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=photoluminescence","dc:title":"photoluminescence"},{"@id":"https://cir.nii.ac.jp/all?q=CeO%3CSUB%3E2%3C/SUB%3E","dc:title":"CeO<SUB>2</SUB>"},{"@id":"https://cir.nii.ac.jp/all?q=UVB","dc:title":"UVB"},{"@id":"https://cir.nii.ac.jp/all?q=rapid%20lamp%20heating","dc:title":"rapid lamp heating"},{"@id":"https://cir.nii.ac.jp/all?q=cerium%20silicate","dc:title":"cerium silicate"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360004233155934336","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Intense Photoluminescence from Ceria-Based Nanoscale Lamellar Hybrid"}]},{"@id":"https://cir.nii.ac.jp/crid/1360011145857273216","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@value":"Large-area epitaxial CeO2 buffer layers on sapphire substrates for the growth of high quality YBa2Cu3O7 films"}]},{"@id":"https://cir.nii.ac.jp/crid/1360298340988128384","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Structural characteristics of CeO2 films grown on biaxially textured nickel (001)"}]},{"@id":"https://cir.nii.ac.jp/crid/1361137045753255552","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Raman study of<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=\"normal\">CeO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Second-order scattering, lattice dynamics, and particle-size effects"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951795598312832","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@value":"Defect-induced Raman spectra in doped<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=\"normal\">CeO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233268911860992","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Violet/blue emission from epitaxial cerium oxide films on silicon substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681223131776","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a CeO2 Buffer Layer."},{"@value":"Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure   with a CeO<sub>2</sub> Buffer Layer"}]},{"@id":"https://cir.nii.ac.jp/crid/1571135649225269632","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1571417124201977728","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1571417124201982720","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1571417124204582912","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1571980074170641536","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1572543024108820352","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1573387449038956928","@type":"Article","relationType":["cites"]}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:0005790638"},{"@type":"CROSSREF","@value":"10.1143/jjap.38.6392"},{"@type":"CIA","@value":"210000045990"},{"@type":"CIA","@value":"110003907578"},{"@type":"CIA","@value":"130004525455"},{"@type":"CROSSREF","@value":"10.1021/am201613z_references_DOI_1aYwbgntD8VheUd4brhzZe9up9X"}]}