著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Kawaguchi Yasutoshi and Honda Yoshio and Matsushima Hidetada and Yamaguchi Masahito and Hiramatsu Kazumasa and Sawaki Nobuhiko,Selective Area Growth of GaN on Si Substrate Using SiO<sub> 2</sub> Mask by Metalorganic Vapor Phase Epitaxy,Japanese Journal of Applied Physics,00214922,The Japan Society of Applied Physics,1998,37,8B,L966-L969,https://cir.nii.ac.jp/crid/1390282681227164032,https://doi.org/10.1143/jjap.37.l966