Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Chang Huang-Choung and Chang Edward Y. and Chung Chao-Cheng and Kuo C. T.,Highly Selective GaAs/Al0.2Ga0.8As Wet Etch Process for the Gate Recess of Low-Voltage-Power Pseudomorphic High-Electron-Mobility Transistor.,Japanese Journal of Applied Physics,00214922,The Japan Society of Applied Physics,2000,39,8,4699-4703,https://cir.nii.ac.jp/crid/1390282681227736832,https://doi.org/10.1143/jjap.39.4699