Evaluation of Silicide Morphology by Near-Infrared-Laser Optical-Beam-Induced-Current Technique.

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  • Koyama Tohru
    Department of Material and Life Science, Osaka University, 2-1 Yamadaoka, Suita, Osaka, Japan ULSI Development Center, Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo, Japan
  • Umeno Masataka
    Department of Material and Life Science, Osaka University, 2-1 Yamadaoka, Suita, Osaka, Japan
  • Mashiko Yoji
    ULSI Development Center, Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo, Japan
  • Komori Junko
    ULSI Development Center, Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo, Japan

Bibliographic Information

Published
2001
DOI
  • 10.1143/jjap.40.6446
Publisher
The Japan Society of Applied Physics

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We found that the near-infrared-laser optical-beam-induced-current (IR-OBIC) technique was very useful for the evaluation of silicide morphology in ultralarge-scale integrated (ULSI) devices. By this technique, it is possible to detect the cohesion points of silicide as two-dimensional images by scanning a near-infrared laser from the back of the chip. The cohesion points appear as bright spots. We confirmed that the number and intensity of bright spots changed according to the extent of cohesion for some different samples upon varying the silicide layer thickness or thermal treatment time after silicide formation. Furthermore, other experiments were performed to clarify the image formation mechanism at cohesion points. It was demonstrated that the electromotive current was generated upon irradiation by the near-infrared-laser, and Schottky junctions were formed at cohesion points. Thus, it was clarified that the images obtained at cohesion points by this technique are a result of the electromotive current generated due to the carriers (electrons or holes) that are excited over the Schottky barrier formed at cohesion points. The IR-OBIC technique can be used to detect the silicide morphology nondestructively without the need to remove the upper layers of the silicide layer. This study reveals a novel application of the IR-OBIC method which is a very useful technique for the evolution of the self-aligned silicide (SALICIDE) process or structure in future ULSIs.

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