Infrared Luminescence from Bismuth-Doped Silica Glass.

  • Nakatsuka Masahiro
    Institute of Laser Engineering, Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan
  • Fujimoto Yasushi
    Institute of Laser Engineering, Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan

Bibliographic Information

Published
2001
DOI
  • 10.1143/jjap.40.l279
Publisher
The Japan Society of Applied Physics

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Description

A new infrared luminescence from bismuth-doped silica glass is discovered. Spectroscopic properties of this glass are different from those of previously reported Bi2+- or Bi3+-doped glasses or crystals. Its luminescence spectrum is wide (full-width at half maximum; about 200 nm), with the peak at 1140 nm with 500 nm excitation. Absorption bands exist between the visible and near-infrared region. The lifetime of bismuth-doped silica glass is 630 μs at room temperature, which is longer than the lifetimes of Bi3+ luminescence reported previously.

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