著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Uematsu Masashi and Kageshima Hiroyuki and Shiraishi Kenji,Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model.,Japanese Journal of Applied Physics,00214922,The Japan Society of Applied Physics,2000,39,10A,L952-L954,https://cir.nii.ac.jp/crid/1390282681230635904,https://doi.org/10.1143/jjap.39.l952