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The oxidation reaction of the emitted Si atoms in the oxide, which controls the oxidation rate at the interface, plays an important role in determining the oxidation pressure dependence. We introduce reaction terms for the oxidation in the oxide so as to fit the oxide thickness at oxygen pressures of 1–20 atm. The simulation is made using constant parameter values for oxidation reaction by changing only the oxidant solubility in the oxide in proportion to oxygen 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