Tunneling current in InGaAs and optimum design for InGaAs/InP avalanche photodiode.

DOI Web Site Web Site 被引用文献5件 参考文献13件
  • Ando Hiroaki
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
  • Kanbe Hiroshi
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
  • Ito Masanori
    Fujitsu Laboratories
  • Kaneda Takao
    Fujitsu Laboratories

この論文をさがす

抄録

Breakdown voltage and dark current density in p+n and n+p In0.53Ga0.47As diodes are compared with theoretical values taking the backward tunneling current into account. Predominant origin of dark current in an InGaAs diode is attributed to the tunneling current. Using these results, optimum design of an InGaAs/InP avalanche photodiode (APD) to obtain low dark current, high multiplication gain, high quantum efficiency and fast response is also discussed.

収録刊行物

被引用文献 (5)*注記

もっと見る

参考文献 (13)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ