著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Tsukihara Masashi and Naoi Yoshiki and Li Hongdong and Sakai Shiro,Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers.,Japanese Journal of Applied Physics,00214922,The Japan Society of Applied Physics,2003,42,4A,1514-1516,https://cir.nii.ac.jp/crid/1390282681232981504,https://doi.org/10.1143/jjap.42.1514