Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers.

DOI Web Site Web Site 被引用文献2件 参考文献12件
  • Tsukihara Masashi
    Department of Electrical and Electronic Engineering, The University of Tokushima
  • Naoi Yoshiki
    Department of Electrical and Electronic Engineering, The University of Tokushima
  • Li Hongdong
    Satellite Venture Business Laboratory, The University of Tokushima
  • Sakai Shiro
    Department of Electrical and Electronic Engineering, The University of Tokushima

この論文をさがす

抄録

We report a new method of reducing the dislocation density in a GaN epilayer grown on sapphire by metalorganic chemical vapor deposition (MOCVD), by introducing GaN-rich-GaNP/GaN multiple layers (MLs) during the growth of the GaN layer. It is found that some threading dislocations bend and/or terminate near the ML region, which would suppress the dislocations propagating to the top film surface. The dislocation density in the films consequently decreases to 6×108 cm−2 in the GaN epilayer with GaNP/GaN MLs, which is a decrease of factor 2 with respect to that in a conventionally grown GaN epilayer. It is considered that the ternary GaN-rich GaNP selectively deposits in the regions of those dislocation-induced pits on the as-grown GaN surface, and then influences the propagation properties of the dislocations. This method can be applied to many devices such as laser diodes whose performance is deteriorated by dislocations.

収録刊行物

被引用文献 (2)*注記

もっと見る

参考文献 (12)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ