{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390282681241284096.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1143/jjap.44.2512"}},{"identifier":{"@type":"NDL_BIB_ID","@value":"7306562"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/7306562"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I7306562"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.44.2512"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.44.2512/pdf"}},{"identifier":{"@type":"NAID","@value":"10015704678"}},{"identifier":{"@type":"NAID","@value":"210000057761"}},{"identifier":{"@type":"NAID","@value":"130004533853"}}],"dc:title":[{"@language":"en","@value":"Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates"}],"dc:language":"en","description":[{"type":"abstract","notation":[{"@language":"en","@value":"We describe the microstructure and optical properties of near-ultraviolet InGaN-GaN light-emitting diodes (LEDs) fabricated onto conventional and patterned sapphire substrates (PSSs) using metalorganic chemical vapor deposition. The PSS LED with an optimized hole depth (1.5 μm) shows an improvement of the room-temperature photoluminescence intensity by one order of magnitude compared with that of the conventional LED. As much as a 63% increased light emission intensity of the PSS LED was obtained at a forward current of 20 mA. For a typical lamp-form PSS LED (at 20 mA), the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The increase of the output power could be partly due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, which was further confirmed by the transmission-electron-microscopy and etch-pit-density studies for the GaN-on-PSS samples. Moreover, the emitted light scattering at the GaN/PSS interface could also contribute to the enhancement of light extraction efficiency."}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410282681241284099","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401735995"},{"@type":"NRID","@value":"9000107343948"},{"@type":"NRID","@value":"9000258180796"}],"foaf:name":[{"@language":"en","@value":"Wang Woei-Kai"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Department of Materials Engineering, National Chung Hsing University"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284101","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401735997"},{"@type":"NRID","@value":"9000107343950"},{"@type":"NRID","@value":"9000258180802"}],"foaf:name":[{"@language":"en","@value":"Shih Wen-Chung"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Institute of Electro-Optical & Material Science, National Formosa University"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284097","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401735999"},{"@type":"NRID","@value":"9000107343952"},{"@type":"NRID","@value":"9000258180804"}],"foaf:name":[{"@language":"en","@value":"Lee Chia-En"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Department of Materials Engineering, National Chung Hsing University"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284104","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401736005"},{"@type":"NRID","@value":"9000107343958"},{"@type":"NRID","@value":"9000258180798"}],"foaf:name":[{"@language":"en","@value":"Jou Ming-Jiunn"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Epistar Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284100","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401736002"},{"@type":"NRID","@value":"9000107343955"},{"@type":"NRID","@value":"9000258180807"}],"foaf:name":[{"@language":"en","@value":"Horng Ray-Hua"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Institute of Precision Engineering, National Chung Hsing University"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284106","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401736003"},{"@type":"NRID","@value":"9000107343956"},{"@type":"NRID","@value":"9000258180808"}],"foaf:name":[{"@language":"en","@value":"Hsu Ta-Cheng"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Epistar Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284102","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401735996"},{"@type":"NRID","@value":"9000107343949"},{"@type":"NRID","@value":"9000258180801"}],"foaf:name":[{"@language":"en","@value":"Wuu Dong-Sing"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Department of Materials Engineering, National Chung Hsing University"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284098","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401736001"},{"@type":"NRID","@value":"9000107343954"},{"@type":"NRID","@value":"9000258180806"}],"foaf:name":[{"@language":"en","@value":"Han Pin"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Institute of Precision Engineering, National Chung Hsing University"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284103","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401736000"},{"@type":"NRID","@value":"9000107343953"},{"@type":"NRID","@value":"9000258180805"}],"foaf:name":[{"@language":"en","@value":"Lin Wen-Yu"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Department of Materials Engineering, National Chung Hsing University"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284105","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401736007"},{"@type":"NRID","@value":"9000107343960"},{"@type":"NRID","@value":"9000258180800"}],"foaf:name":[{"@language":"en","@value":"Yu Yuan-Hsin"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Wafer Works Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284107","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401735998"},{"@type":"NRID","@value":"9000107343951"},{"@type":"NRID","@value":"9000258180803"}],"foaf:name":[{"@language":"en","@value":"Fang Jau-Shing"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Institute of Electro-Optical & Material Science, National Formosa University"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284108","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401736006"},{"@type":"NRID","@value":"9000107343959"},{"@type":"NRID","@value":"9000258180799"}],"foaf:name":[{"@language":"en","@value":"Lin Aikey"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Wafer Works Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681241284096","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401736004"},{"@type":"NRID","@value":"9000107343957"},{"@type":"NRID","@value":"9000258180797"}],"foaf:name":[{"@language":"en","@value":"Huo Tai-Chan"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Epistar Corporation"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"},{"@type":"NDL_BIB_ID","@value":"000000159719"},{"@type":"ISSN","@value":"00214922"},{"@type":"LISSN","@value":"00214922"},{"@type":"PISSN","@value":"https://id.crossref.org/issn/13474065"},{"@type":"NCID","@value":"AA10457675"}],"prism:publicationName":[{"@language":"en","@value":"Japanese Journal of Applied Physics"},{"@language":"en","@value":"JPN. J. APPL. PHYS."},{"@language":"en","@value":"JJAP"}],"dc:publisher":[{"@language":"en","@value":"The Japan Society of Applied Physics"}],"prism:publicationDate":"2005","prism:volume":"44","prism:number":"4B","prism:startingPage":"2512","prism:endingPage":"2515"},"reviewed":"false","url":[{"@id":"http://id.ndl.go.jp/bib/7306562"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I7306562"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.44.2512"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.44.2512/pdf"}],"availableAt":"2005","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=GaN","dc:title":"GaN"},{"@id":"https://cir.nii.ac.jp/all?q=InGaN","dc:title":"InGaN"},{"@id":"https://cir.nii.ac.jp/all?q=light-emitting%20diode","dc:title":"light-emitting diode"},{"@id":"https://cir.nii.ac.jp/all?q=patterned%20sapphire%20substrate","dc:title":"patterned sapphire substrate"},{"@id":"https://cir.nii.ac.jp/all?q=dislocation%20density","dc:title":"dislocation density"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360284924866275584","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Performance of InGaN/GaN light-emitting diodes grown using NH<sub>3</sub>with oxygen-containing impurities"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292619037451264","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399841648384","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574096441440896","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Nitride-based LEDs fabricated on patterned sapphire substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1361137046442731008","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence"}]},{"@id":"https://cir.nii.ac.jp/crid/1361981468904124800","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262944624332928","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"White light from InGaN/conjugated polymer hybrid light-emitting diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544420442396160","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs"}]},{"@id":"https://cir.nii.ac.jp/crid/1362825895437529728","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388845330824192","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Characterization of threading dislocations in GaN epitaxial layers"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670320765112448","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The Blue Laser Diode"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670320909732480","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206249600000","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates."},{"@language":"ja-Kana","@value":"InGaN-Based Blue Light-Emitting Diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206255953536","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy."}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681231053568","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip."}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681231331200","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode."}]},{"@id":"https://cir.nii.ac.jp/crid/1520009409266111872","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates"},{"@language":"ja-Kana","@value":"Characteristics of Flip Chip InGaN Based Light Emitting Diodes on Patterned Sapphire Substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1520290883741561472","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing"},{"@language":"ja-Kana","@value":"Enhancement of light output power of InGaN GaN multiple quantum well light emitting diodes by titanium dioxide texturing"}]},{"@id":"https://cir.nii.ac.jp/crid/1520572358629804416","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Transmission Electron Microscopy Investigation of Local Atomic Environment of Nitrogen inside Voids Formed at GaN/Sapphire Interface"},{"@language":"ja-Kana","@value":"Transmission Electron Microscopy Investigation of Local Atomic Environment of Nitrogen inside Voids Formed at GaN Sapphire Interface"}]},{"@id":"https://cir.nii.ac.jp/crid/1520853833250770688","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Growth of GaN layer and characterization of light-emitting diode using random-cone patterned sapphire substrate"},{"@language":"ja-Kana","@value":"Growth of GaN layer and characterization of light emitting diode using random cone patterned sapphire substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1570009749148551808","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1570291224271103232","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1570572699632436480","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1571417124425590400","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1571698599760321408","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1572261549348849536","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1572261551646629120","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1572543026618611456","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1572824498902483584","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1573387449649558912","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1573950401500809088","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1574231874224209792","@type":"Article","relationType":["cites"]}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:0025158968"},{"@type":"NDL_SEARCH","@value":"oai:ndlsearch.ndl.go.jp:R000000004-I7306562"},{"@type":"CROSSREF","@value":"10.1143/jjap.44.2512"},{"@type":"CIA","@value":"210000057761"},{"@type":"CIA","@value":"10015704678"},{"@type":"CIA","@value":"130004533853"},{"@type":"CROSSREF","@value":"10.1143/jjap.45.279_references_DOI_GK3k7Y9YDRLH0SAzZveDMzpMV09"},{"@type":"CROSSREF","@value":"10.1143/jjap.48.122103_references_DOI_GK3k7Y9YDRLH0SAzZveDMzpMV09"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.11ng02_references_DOI_GK3k7Y9YDRLH0SAzZveDMzpMV09"},{"@type":"CROSSREF","@value":"10.1143/jjap.47.5438_references_DOI_GK3k7Y9YDRLH0SAzZveDMzpMV09"},{"@type":"CROSSREF","@value":"10.7567/jjap.53.081001_references_DOI_GK3k7Y9YDRLH0SAzZveDMzpMV09"},{"@type":"CROSSREF","@value":"10.1143/jjap.45.3430_references_DOI_GK3k7Y9YDRLH0SAzZveDMzpMV09"}]}