{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390282681435990272.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1380/jsssj.37.104"}},{"identifier":{"@type":"NDL_BIB_ID","@value":"027198424"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/027198424"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I027198424"}},{"identifier":{"@type":"URI","@value":"https://www.jstage.jst.go.jp/article/jsssj/37/3/37_104/_pdf"}},{"identifier":{"@type":"NAID","@value":"130005138634"}}],"dc:title":[{"@language":"ja","@value":"クラスターイオン注入によるCMOSセンサのゲッタリング技術"},{"@language":"en","@value":"Gettering Technology for CMOS Image Sensors Using a Cluster Ion Implantation"},{"@language":"ja-Kana","@value":"クラスターイオン チュウニュウ ニ ヨル CMOS センサ ノ ゲッタリング ギジュツ"}],"dc:language":"ja","description":[{"type":"abstract","notation":[{"@language":"en","@value":"In recent years, CMOS image sensor has been widely used for ubiquitous devices such as smart-phone and tablets. However, CMOS image sensors performance are dramatically influenced by process induced defects such as metallic impurities related deep level defects in the space-charge region. Thus, it is extremely important to study metallic impurities influence on CMOS image sensor performance and to develop effectiveness metallic impurities gettering technique. In this article, we introduce our new proximity gettering technique for advanced CMOS image sensor by using a carbon cluster ion implantation technique. In addition, we demonstrate that the carbon cluster ion implanted silicon wafer has high gettering capability of oxygen, hydrogen and metallic impurity after CMOS simulation heat treatment."}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410282681435990278","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000318135263"}],"foaf:name":[{"@language":"ja","@value":"栗田 一成"},{"@language":"en","@value":"KURITA Kazunari"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department"},{"@language":"ja","@value":"株式会社SUMCO技術本部 評価・基盤技術部"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681435990274","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000318135264"}],"foaf:name":[{"@language":"ja","@value":"門野 武"},{"@language":"en","@value":"KADONO Takeshi"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department"},{"@language":"ja","@value":"株式会社SUMCO技術本部 評価・基盤技術部"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681435990273","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000318135265"}],"foaf:name":[{"@language":"ja","@value":"奥山 亮輔"},{"@language":"en","@value":"OKUYAMA Ryousuke"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department"},{"@language":"ja","@value":"株式会社SUMCO技術本部 評価・基盤技術部"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681435990275","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000318135266"}],"foaf:name":[{"@language":"ja","@value":"廣瀬 諒"},{"@language":"en","@value":"HIROSE Ryo"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department"},{"@language":"ja","@value":"株式会社SUMCO技術本部 評価・基盤技術部"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681435990276","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000318135267"}],"foaf:name":[{"@language":"ja","@value":"柾田 亜由美"},{"@language":"en","@value":"MASADA Ayumi"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department"},{"@language":"ja","@value":"株式会社SUMCO技術本部 評価・基盤技術部"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681435990272","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000318135268"}],"foaf:name":[{"@language":"ja","@value":"奥田 秀彦"},{"@language":"en","@value":"OKUDA Hidehiko"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department"},{"@language":"ja","@value":"株式会社SUMCO技術本部 評価・基盤技術部"}]},{"@id":"https://cir.nii.ac.jp/crid/1410282681435990277","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000318135269"}],"foaf:name":[{"@language":"ja","@value":"古賀 祥泰"},{"@language":"en","@value":"Yoshihiko KOGA"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department"},{"@language":"ja","@value":"株式会社SUMCO技術本部 評価・基盤技術部"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"03885321"},{"@type":"EISSN","@value":"18814743"},{"@type":"NDL_BIB_ID","@value":"000000033734"},{"@type":"ISSN","@value":"03885321"},{"@type":"LISSN","@value":"03885321"},{"@type":"NCID","@value":"AN00334149"}],"prism:publicationName":[{"@language":"en","@value":"Hyomen Kagaku"},{"@language":"ja","@value":"表面科学"},{"@language":"en","@value":"J. Surf. Sci. Soc. Jpn."},{"@language":"en","@value":"Journal of The Surface Science Society of Japan"},{"@language":"ja","@value":"表面科学"}],"dc:publisher":[{"@language":"en","@value":"The Surface Science Society of Japan"},{"@language":"ja","@value":"公益社団法人 日本表面科学会"}],"prism:publicationDate":"2016","prism:volume":"37","prism:number":"3","prism:startingPage":"104","prism:endingPage":"109"},"reviewed":"false","dcterms:accessRights":"http://purl.org/coar/access_right/c_abf2","url":[{"@id":"http://id.ndl.go.jp/bib/027198424"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I027198424"},{"@id":"https://www.jstage.jst.go.jp/article/jsssj/37/3/37_104/_pdf"}],"availableAt":"2016","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=cluster%20implantation","dc:title":"cluster implantation"},{"@id":"https://cir.nii.ac.jp/all?q=metallic%20impurity","dc:title":"metallic impurity"},{"@id":"https://cir.nii.ac.jp/all?q=gettering","dc:title":"gettering"},{"@id":"https://cir.nii.ac.jp/all?q=silicon%20wafer","dc:title":"silicon wafer"},{"@id":"https://cir.nii.ac.jp/all?q=CMOS%20image%20sensors","dc:title":"CMOS image sensors"},{"@id":"https://cir.nii.ac.jp/all?q=cluster%20implantation","dc:title":"cluster implantation"},{"@id":"https://cir.nii.ac.jp/all?q=metallic%20impurity","dc:title":"metallic impurity"},{"@id":"https://cir.nii.ac.jp/all?q=gettering","dc:title":"gettering"},{"@id":"https://cir.nii.ac.jp/all?q=silicon%20wafer","dc:title":"silicon wafer"},{"@id":"https://cir.nii.ac.jp/all?q=CMOS%20image%20sensors","dc:title":"CMOS image sensors"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449891434112","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924867556352","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Proximity gettering of C<sub>3</sub>H<sub>5</sub> carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874822017792","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699993981784832","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Hydrogen in Crystalline Semiconductors"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699994808779520","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Gettering in silicon"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233268970611584","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Hydrogen in crystalline semiconductors"}]},{"@id":"https://cir.nii.ac.jp/crid/1390574655178725760","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Dissociation Kinetics of Trapped Hydrogen in High-dose Hydrocarbon-Molecular-Ion-Implanted Silicon during Rapid Thermal Annealing"}]}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:2000928368"},{"@type":"NDL_SEARCH","@value":"oai:ndlsearch.ndl.go.jp:R000000004-I027198424"},{"@type":"CROSSREF","@value":"10.1380/jsssj.37.104"},{"@type":"CIA","@value":"130005138634"},{"@type":"OPENAIRE","@value":"doi_dedup___::842a7eae7d2e0f238ca1884bbea7c7a2"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.121301_references_DOI_A1kX5CyECs6ZI9ijkcSWwB96HAO"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.091302_references_DOI_A1kX5CyECs6ZI9ijkcSWwB96HAO"},{"@type":"CROSSREF","@value":"10.1380/ejssnt.2022-029_references_DOI_A1kX5CyECs6ZI9ijkcSWwB96HAO"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.021304_references_DOI_A1kX5CyECs6ZI9ijkcSWwB96HAO"}]}