Gettering Technology for CMOS Image Sensors Using a Cluster Ion Implantation

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  • KURITA Kazunari
    SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department
  • KADONO Takeshi
    SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department
  • OKUYAMA Ryousuke
    SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department
  • HIROSE Ryo
    SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department
  • MASADA Ayumi
    SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department
  • OKUDA Hidehiko
    SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department
  • Yoshihiko KOGA
    SUMCO Corporation, Technology Division, Advanced Evaluation & Technology Development Department

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Other Title
  • クラスターイオン注入によるCMOSセンサのゲッタリング技術
  • クラスターイオン チュウニュウ ニ ヨル CMOS センサ ノ ゲッタリング ギジュツ

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Description

In recent years, CMOS image sensor has been widely used for ubiquitous devices such as smart-phone and tablets. However, CMOS image sensors performance are dramatically influenced by process induced defects such as metallic impurities related deep level defects in the space-charge region. Thus, it is extremely important to study metallic impurities influence on CMOS image sensor performance and to develop effectiveness metallic impurities gettering technique. In this article, we introduce our new proximity gettering technique for advanced CMOS image sensor by using a carbon cluster ion implantation technique. In addition, we demonstrate that the carbon cluster ion implanted silicon wafer has high gettering capability of oxygen, hydrogen and metallic impurity after CMOS simulation heat treatment.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 37 (3), 104-109, 2016

    The Surface Science Society of Japan

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