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The MgO layer deposited at 200℃ and deposition rate of 0.30 nm/min grew with (001)-orientation on Si(001) substrate. The (001)-orientation and crystallization of the MgO layer were enhanced by insertion of Mg layer into interface between Si substrate and MgO layer. It is considered that the Mg layer prevented oxidation of Si at interface and functioned as buffer layer.<br>"}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410572171495503363","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000256895407"}],"foaf:name":[{"@language":"en","@value":"Onodera Takashi"},{"@language":"ja","@value":"小野寺 学史"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Department of Materials Science, Graduate School of Engineering, Tohoku University"},{"@language":"ja","@value":"東北大学大学院工学研究科知能デバイス材料学専攻"}]},{"@id":"https://cir.nii.ac.jp/crid/1410853646405971203","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000256895402"}],"foaf:name":[{"@language":"en","@value":"Yoshida Masahiro"},{"@language":"ja","@value":"吉田 昌弘"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Department of Materials Science, Graduate School of Engineering, Tohoku 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