{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390282681489896064.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1585/jspf.75.350"}},{"identifier":{"@type":"COI","@value":"1:CAS:528:DyaK1MXkslKjtbY%3D"}},{"identifier":{"@type":"NDL_BIB_ID","@value":"4710600"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/4710600"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I4710600"}},{"identifier":{"@type":"URI","@value":"https://dl.ndl.go.jp/pid/10453561"}},{"identifier":{"@type":"NDL_BIB_ID","@value":"10453561"}},{"identifier":{"@type":"NAID","@value":"110003826459"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/digimeta/10453561"}},{"identifier":{"@type":"URI","@value":"http://www.jstage.jst.go.jp/article/jspf/75/4/75_4_350/_pdf"}},{"identifier":{"@type":"URI","@value":"http://dl.ndl.go.jp/info:ndljp/pid/10453561"}}],"dc:title":[{"@language":"en","@value":"Various Phenomena on PSI. PSI in Plasma Processing Devices. Plasma Etching."},{"@language":"ja","@value":"多様なＰＳＩ現象　　３　プラズマプロセス装置におけるプラズマ・表面相互作用　　３．１　プラズマエッチング"},{"@value":"プラズマエッチング"},{"@value":"3.1 プラズマエッチング : 3. プラズマプロセス装置におけるプラズマ・表面相互作用(<特集>プラズマ・表面相互作用) : 多様なPSI現象"},{"@value":"Various Phenomena on PSI 3. PSI in Plasma Processing Devices 3.1 Plasma Etching"}],"dc:language":"ja","description":[{"type":"abstract","notation":[{"@language":"en","@value":"Plasma etching is an indispensable processing technique in the fabrication of modern microelectronic devices. The processing is essentially the result of physical and chemical processes of enormous complexity that occur in the gas phase and at the gas-solid interface. Nowadays, as integrated circuit device dimensions continue to be scaled down, increasingly strict requirements are being imposed on plasma etching technology, which in turn requires a better understanding of the physics and chemistry underlying the processing. This paper reviews recent studies of plasma-surface interactions in plasma etching environments, including gas-phase kinetics, plasma-wall interactions, and plasma-surface interactions in large open fields and also in microstructural features. Emphasis is placed on silicon etching in low-pressure, high-density chlorine-containing plasmas, which relies primarily on ion-assisted or ion-enhanced surface reaction processes during simultaneous exposure of neutral reactants and energetic ions."}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1420564276183816576","@type":"Researcher","personIdentifier":[{"@type":"KAKEN_RESEARCHERS","@value":"30311731"},{"@type":"NRID","@value":"1000030311731"},{"@type":"NRID","@value":"9000107355889"},{"@type":"NRID","@value":"9000107354660"},{"@type":"NRID","@value":"9000002175977"},{"@type":"NRID","@value":"9000252948482"},{"@type":"NRID","@value":"9000401843977"},{"@type":"NRID","@value":"9000401660048"},{"@type":"NRID","@value":"9000402000787"},{"@type":"NRID","@value":"9000402000930"},{"@type":"NRID","@value":"9000401790694"},{"@type":"NRID","@value":"9000401705831"},{"@type":"NRID","@value":"9000401742652"},{"@type":"NRID","@value":"9000107390219"},{"@type":"NRID","@value":"9000252946256"},{"@type":"NRID","@value":"9000024764045"},{"@type":"NRID","@value":"9000024282465"},{"@type":"NRID","@value":"9000403553603"},{"@type":"NRID","@value":"9000252950485"},{"@type":"NRID","@value":"9000402021061"},{"@type":"NRID","@value":"9000258136849"},{"@type":"NRID","@value":"9000048721071"},{"@type":"NRID","@value":"9000055309639"},{"@type":"NRID","@value":"9000078967592"},{"@type":"NRID","@value":"9000392689000"},{"@type":"NRID","@value":"9000282391669"},{"@type":"NRID","@value":"9000282391679"},{"@type":"NRID","@value":"9000401643299"},{"@type":"NRID","@value":"9000401799860"},{"@type":"NRID","@value":"9000401799933"},{"@type":"NRID","@value":"9000402000968"},{"@type":"NRID","@value":"9000392724534"},{"@type":"NRID","@value":"9000024768009"},{"@type":"NRID","@value":"9000402021122"},{"@type":"NRID","@value":"9000401663549"},{"@type":"NRID","@value":"9000401801695"},{"@type":"NRID","@value":"9000401800105"},{"@type":"NRID","@value":"9000401799919"},{"@type":"NRID","@value":"9000401790702"},{"@type":"NRID","@value":"9000258128477"},{"@type":"NRID","@value":"9000258130991"},{"@type":"NRID","@value":"9000282391677"},{"@type":"NRID","@value":"9000401663510"},{"@type":"NRID","@value":"9000401665659"},{"@type":"NRID","@value":"9000402000801"},{"@type":"NRID","@value":"9000025106510"},{"@type":"NRID","@value":"9000003296130"},{"@type":"NRID","@value":"9000283158792"},{"@type":"NRID","@value":"9000024277277"},{"@type":"NRID","@value":"9000323844019"},{"@type":"NRID","@value":"9000402000972"},{"@type":"NRID","@value":"9000402000728"},{"@type":"NRID","@value":"9000005678280"},{"@type":"NRID","@value":"9000392676551"},{"@type":"NRID","@value":"9000402022544"},{"@type":"NRID","@value":"9000401586306"},{"@type":"NRID","@value":"9000401617112"},{"@type":"NRID","@value":"9000401656395"},{"@type":"NRID","@value":"9000401656294"},{"@type":"NRID","@value":"9000401658373"},{"@type":"NRID","@value":"9000258123437"},{"@type":"NRID","@value":"9000282391691"},{"@type":"NRID","@value":"9000282391700"},{"@type":"NRID","@value":"9000252765898"},{"@type":"NRID","@value":"9000401585877"},{"@type":"NRID","@value":"9000401644021"},{"@type":"NRID","@value":"9000401800063"},{"@type":"NRID","@value":"9000401786363"},{"@type":"NRID","@value":"9000024940583"},{"@type":"NRID","@value":"9000283157303"},{"@type":"NRID","@value":"9000401679822"},{"@type":"NRID","@value":"9000401632009"},{"@type":"NRID","@value":"9000401800101"},{"@type":"NRID","@value":"9000401755456"},{"@type":"NRID","@value":"9000282391709"},{"@type":"NRID","@value":"9000282391706"},{"@type":"NRID","@value":"9000252762153"},{"@type":"NRID","@value":"9000254131411"},{"@type":"NRID","@value":"9000402021127"},{"@type":"NRID","@value":"9000401670800"},{"@type":"NRID","@value":"9000402000962"},{"@type":"NRID","@value":"9000401790681"},{"@type":"NRID","@value":"9000283195028"},{"@type":"NRID","@value":"9000081125156"},{"@type":"NRID","@value":"9000401642696"},{"@type":"NRID","@value":"9000258127016"},{"@type":"NRID","@value":"9000258177174"},{"@type":"NRID","@value":"9000107390329"},{"@type":"NRID","@value":"9000283159189"},{"@type":"NRID","@value":"9000024194595"},{"@type":"NRID","@value":"9000282391713"},{"@type":"NRID","@value":"9000402008845"},{"@type":"NRID","@value":"9000258129769"},{"@type":"NRID","@value":"9000107366571"},{"@type":"NRID","@value":"9000392687302"},{"@type":"NRID","@value":"9000024149854"},{"@type":"NRID","@value":"9000282391686"},{"@type":"NRID","@value":"9000282391694"},{"@type":"NRID","@value":"9000022064970"},{"@type":"NRID","@value":"9000252947117"},{"@type":"NRID","@value":"9000401588168"},{"@type":"NRID","@value":"9000401640279"},{"@type":"NRID","@value":"9000401807985"},{"@type":"NRID","@value":"9000402002559"},{"@type":"NRID","@value":"9000258136946"},{"@type":"NRID","@value":"9000392732634"},{"@type":"NRID","@value":"9000282391673"},{"@type":"NRID","@value":"9000308732499"},{"@type":"NRID","@value":"9000402021131"},{"@type":"NRID","@value":"9000401650985"},{"@type":"NRID","@value":"9000401800095"},{"@type":"NRID","@value":"9000401743125"},{"@type":"NRID","@value":"9000258123422"},{"@type":"NRID","@value":"9000024261698"},{"@type":"NRID","@value":"9000401660795"},{"@type":"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Kouichi"},{"@language":"ja","@value":"斧 高一"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Graduate School of Engineering,Kyoto University,Kyoto 606-8501,Japan"},{"@language":"ja","@value":"京都大学大学院工学研究科"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"09187928"},{"@type":"NDL_BIB_ID","@value":"000000085829"},{"@type":"ISSN","@value":"09187928"},{"@type":"LISSN","@value":"09187928"},{"@type":"NCID","@value":"AN10401672"}],"prism:publicationName":[{"@language":"en","@value":"Journal of Plasma and Fusion Research"},{"@language":"ja","@value":"プラズマ・核融合学会誌"},{"@language":"en","@value":"J. Plasma Fusion Res."}],"dc:publisher":[{"@language":"en","@value":"The Japan Society of Plasma Science and Nuclear Fusion Research"},{"@language":"ja","@value":"社団法人 プラズマ・核融合学会"}],"prism:publicationDate":"1999","prism:volume":"75","prism:number":"4","prism:startingPage":"350","prism:endingPage":"363"},"reviewed":"false","dcterms:accessRights":"http://purl.org/coar/access_right/c_abf2","url":[{"@id":"http://id.ndl.go.jp/bib/4710600"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I4710600"},{"@id":"https://dl.ndl.go.jp/pid/10453561"},{"@id":"http://id.ndl.go.jp/digimeta/10453561"},{"@id":"http://www.jstage.jst.go.jp/article/jspf/75/4/75_4_350/_pdf"},{"@id":"http://dl.ndl.go.jp/info:ndljp/pid/10453561"}],"availableAt":"1999","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=plasma%20etching","dc:title":"plasma etching"},{"@id":"https://cir.nii.ac.jp/all?q=plasma%20reactor","dc:title":"plasma reactor"},{"@id":"https://cir.nii.ac.jp/all?q=plasma-surface%20interactions","dc:title":"plasma-surface interactions"},{"@id":"https://cir.nii.ac.jp/all?q=etching%20reactions","dc:title":"etching reactions"},{"@id":"https://cir.nii.ac.jp/all?q=ion%20and%20neutral%20transport","dc:title":"ion and neutral transport"},{"@id":"https://cir.nii.ac.jp/all?q=ion-assisted%20or%20ion-enhanced%20surface%20kinetics","dc:title":"ion-assisted or ion-enhanced surface kinetics"},{"@id":"https://cir.nii.ac.jp/all?q=silicon","dc:title":"silicon"},{"@id":"https://cir.nii.ac.jp/all?q=polycrystalline%20silicon","dc:title":"polycrystalline silicon"},{"@id":"https://cir.nii.ac.jp/all?q=chlorine-containing%20plasmas","dc:title":"chlorine-containing plasmas"},{"@id":"https://cir.nii.ac.jp/all?q=low-pressure%20high-density%20plasmas","dc:title":"low-pressure high-density plasmas"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360011145440218112","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Numerical study of the etch anisotropy in low-pressure, high-density plasma etching"}]},{"@id":"https://cir.nii.ac.jp/crid/1360011146536267264","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@value":"Molecular dynamics simulation of reactive ion etching of Si by energetic Cl ions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292619143649664","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"<i>I</i>\n                  <i>n</i> <i>s</i>\n                  <i>i</i>\n                  <i>t</i>\n                  <i>u</i> electron spectroscopy study of Si surfaces after Ar-ion-assisted Cl2 etching"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292619743494400","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Role of ions in reactive ion etching"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574095574878080","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Low-energy Ar ion-induced and chlorine ion etching of silicon"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574095723672704","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855571253148160","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Ion-assisted Si/XeF2-etching: Influence of ion/neutral flux ratio and ion energy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360865814736195968","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"The Development of a Compact Pulsed Power Supply with Semiconductor Series 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diffusion"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107370654380544","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Kinetics of etch products and reaction process in electron cyclotron resonance plasma etching of Si"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670320254613504","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Chemical sputtering of silicon by F+, Cl+, and Br+ ions: Reactive spot model for reactive ion etching"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670320353892864","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@value":"Precursor and direct activated chemisorption of chlorine molecules onto silicon Si (111) (7.times.7) and Si (100) (2.times.1) surfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670320466132224","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@value":"<i>In</i> <i>situ</i> pulsed laser-induced thermal desorption studies of the silicon chloride surface layer during silicon etching in high density plasmas of Cl2 and Cl2/O2 mixtures"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951793902745728","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Microscopic uniformity in plasma etching"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951794437180032","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@value":"Study of silicon etching in CF4/O2 plasmas to establish surface re-emission as the dominant transport mechanism"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951794813123456","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effects of  O 2 Feed Gas Impurity on Cl2 Based Plasma Etching of Polysilicon"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951795892276864","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effect of Cl2 additions to an argon glow discharge"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233268205159552","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Scaling of Si and GaAs trench etch rates with aspect ratio, feature width, and substrate temperature"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233268617925504","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"WITHDRAWN: Introduction to Plasma Chemistry"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233269128851584","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Comparison of  CF 3Cl and  C 2 F 6 + Cl2 Plasma Chemistry by Power Modulation"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233269707504512","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Chemical topography of anisotropic etching of polycrystalline Si masked with photoresist"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206245056896","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Chemical Kinetics of Chlorine in Electron Cyclotron Resonance Plasma Etching of Si."}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206248343552","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Observation of Microscopic Nonuniformity during Overetch in Polysilicon Gate Etching."},{"@language":"ja-Kana","@value":"Observation of Microscopic Nonuniformit"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206266608256","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Aspect Ratio Independent Etching: Fact or Fantasy?"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206513461504","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy","isCitedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Numerical Simulation and Technology Computer-Aided Design of Plasma Processing for the Fabrication of Semiconductor Microelectronic Devices"},{"@language":"ja","@value":"半導体プラズマプロセスシミュレーションとＴＣＡＤ"},{"@language":"ja-Kana","@value":"ハンドウタイ プラズマプロセスシミュレーション ト TCAD"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282679041811584","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Processing Development and Surface Preparation Review. 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