{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390289920604129152.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.32157/jsrc.106.0_9"}},{"identifier":{"@type":"NAID","@value":"130008112470"}}],"dc:title":[{"@language":"ja","@value":"特集記事（EUV）：　極端紫外線リソグラフィーの現状・課題・今後の展開"}],"dc:language":"ja","description":[{"type":"abstract","notation":[{"@language":"ja","@value":"極端紫外線リソグラフィー（EUVL）技術は2019年に半導体量産技術として用いられる．この技術開発の現状および課題について解説するとともに，今後の展開についても議論する．特に5 nm nodeではEUVレジスト材料プロセス技術が最重要課題になっている．この内容についても現状および課題解決に向けた取り組みを紹介する．近年，光源のパワーの向上が図られており，2017年には中間集光点で250 Wを実現し，AMSLの本社工場のNXE:3400Bの露光装置でこの光源を用いて300 mmのウェハで1時間に125のスループットを達成した．これにより，ロジックデバイスを対象に量産に適用する機運が高まり，2019年より半導体チップの量産技術として使用される予定となっている．"}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410289920604129152","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000414229182"}],"foaf:name":[{"@language":"ja","@value":"渡邊 健夫"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"兵庫県立大"}]}],"publication":{"publicationIdentifier":[{"@type":"LISSN","@value":"02866722"},{"@type":"EISSN","@value":"21880115"}],"prism:publicationName":[{"@language":"en","@value":"Biannual Journal of Japanese Society of Radiation Chemistry"},{"@language":"ja","@value":"放射線化学"}],"dc:publisher":[{"@language":"en","@value":"Japanese Society of Radiation Chemistry"},{"@language":"ja","@value":"日本放射線化学会"}],"prism:publicationDate":"2018","prism:volume":"106","prism:number":"0","prism:startingPage":"9"},"availableAt":"2018","dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:2008912352"},{"@type":"CIA","@value":"130008112470"}]}