書誌事項
- タイトル別名
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- Development of Discharge-Flow Type of Chemical Dry Etching Apparatus
- ホウデン フローガタ ケミカルドライ エッチング ソウチ ノ シサク
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説明
A discharge-flow type of chemical dry etching apparatus was developed in order to study the etching processes of Si(1,0,0) and SiO_2 substrates at a room temperature. No etching of Si and SiO_2 substrates occurred in the Ar discharge flow, when such reactive species as CF_2, CF_3, and CF_3^+ were produced from the Ar(^3P_<0,2>)/CF_4, Ar^+(^2P_<1/2,3/2>)/CF_4, and Ar^+*/CF_4 reactions 1cm upstream from the substrates. When F atoms were produced from a microwave discharge of Ar/CF_4 mixtures about 10cm upstream from the substrates, the selective etching of Si and SiO_2 occurred. The etching rates of Si and SiO_2 were about 700 and 70 Å/min, respectively.
収録刊行物
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- 九州大学機能物質科学研究所報告
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九州大学機能物質科学研究所報告 11 (1), 17-21, 1997-07-25
九州大学機能物質科学研究所
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詳細情報 詳細情報について
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- CRID
- 1390290699812233984
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- NII論文ID
- 110006177516
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- NII書誌ID
- AN10060378
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- ISSN
- 09143793
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- DOI
- 10.15017/7865
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- HANDLE
- 2324/7865
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- NDL書誌ID
- 4265638
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- IRDB
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用可