Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Ueno Kohei and Morikawa Soichiro and Shibahara Keita and Kobayashi Atsushi and Fujioka Hiroshi,Intentional doping in GaN via sputtering and its application to nitride devices,JSAP Annual Meetings Extended Abstracts,2436-7613,The Japan Society of Applied Physics,2020-02-28,2020.1,0,3078-3078,https://cir.nii.ac.jp/crid/1390292240175493376,https://doi.org/10.11470/jsapmeeting.2020.1.0_3078