Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI) Aoyama Kohei and Ueno Kohei and Kobayashi Atsushi and Fujioka Hiroshi,Characterization of Schottky barrier height for metal/lightly p-type doped GaN interface on vertical SBDs,JSAP Annual Meetings Extended Abstracts,2436-7613,The Japan Society of Applied Physics,2021-02-26,2021.1,0,2617-2617,https://cir.nii.ac.jp/crid/1390292472557582592,https://doi.org/10.11470/jsapmeeting.2021.1.0_2617