Growth and characterization of p-type GaN prepared by sputtering
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- Shibahara Keita
- IIS, U-Tokyo
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- Ueno Kohei
- IIS, U-Tokyo
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- Kobayashi Atsushi
- IIS, U-Tokyo
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- Fujioka Hiroshi
- IIS, U-Tokyo JST-ACCEL
Bibliographic Information
- Other Title
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- スパッタリング法により形成したp型GaN薄膜の深い準位の評価
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2019.1 (0), 3193-3193, 2019-02-25
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390293202186030592
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC