Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Fudetani Taiga and Ueno Kohei and Kobayashi Atsushi and Fujioka Hiroshi,Application of PSD-grown heavily doped GaN for tunnel junction devices,JSAP Annual Meetings Extended Abstracts,2436-7613,The Japan Society of Applied Physics,2018-09-05,2018.2,0,3254-3254,https://cir.nii.ac.jp/crid/1390293434338562944,https://doi.org/10.11470/jsapmeeting.2018.2.0_3254