Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
okuyama shogo and Habuka Hitoshi and Takahasi Yoshinao and Kato Tomohisa,Surface morphology of 4H - SiC wafer after etching using ClF<sub>3</sub> gas,JSAP Annual Meetings Extended Abstracts,2436-7613,The Japan Society of Applied Physics,2017-08-25,2017.2,0,3516-3516,https://cir.nii.ac.jp/crid/1390293943110528000,https://doi.org/10.11470/jsapmeeting.2017.2.0_3516