Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
YAMAMOTO Masayoshi,Introduction: Applications Roadmap of GaN Power Semiconductor Devices,The Journal of The Institute of Electrical Engineers of Japan,13405551,The Institute of Electrical Engineers of Japan,2019-02-01,139,2,76-79,https://cir.nii.ac.jp/crid/1390564238074519296,https://doi.org/10.1541/ieejjournal.139.76