中間層による保護膜付きMo/Si多層膜のブリスタ耐性の改善

DOI 機関リポジトリ (HANDLE) オープンアクセス

書誌事項

タイトル別名
  • Improvement of blister-resistance of Mo/Si multilayers by capping layer attached via intermediate layer

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説明

Mo/Si multilayer mirrors are used for extreme ultraviolet (EUV) lithography. The formation of hydrogen-induced blister in the Mo/Si multilayer is a problem that reduces the reflectance of the mirror. In this study, the blister-resistance of Mo/Si multilayer mirror samples with multiple materials of intermediate layers as thin as 1 nm between the capping layer and the multilayer was investigated using a high-frequency hydrogen plasma system as a hydrogen ion source. As a result, it was observed that the intermediate layer suppressed the blister formation. Furthermore, intermediate layer materials that can suppress blister formation and materials that cannot suppress blister formation were observed, and investigation has shown that the blister-resistance is greatly affected by the properties of the multilayer interface.

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詳細情報 詳細情報について

  • CRID
    1390573242461754496
  • NII論文ID
    120007193386
  • NII書誌ID
    AA1147319X
  • DOI
    10.15017/4763151
  • HANDLE
    2324/4763151
  • 本文言語コード
    ja
  • 資料種別
    departmental bulletin paper
  • データソース種別
    • JaLC
    • IRDB
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用可

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