{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390574655178725760.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1380/ejssnt.2022-029"}},{"identifier":{"@type":"URI","@value":"https://www.jstage.jst.go.jp/article/ejssnt/20/3/20_2022-029/_pdf"}}],"dc:title":[{"@language":"en","@value":"Dissociation Kinetics of Trapped Hydrogen in High-dose Hydrocarbon-Molecular-Ion-Implanted Silicon during Rapid Thermal Annealing"}],"dc:language":"en","description":[{"type":"abstract","notation":[{"@language":"en","@value":"<p>We investigated the annealing behavior of hydrogen in a high-dose hydrocarbon-molecular-ion-implanted silicon during rapid thermal annealing (RTA). Gettering sinks in the high-dose hydrocarbon-molecular-ion-implanted region are formed not only at carbon-related defects but also at defects related to the amorphous layer after RTA. The concentration of hydrogen trapped by the defects was analyzed by secondary ion mass spectrometry (SIMS). As a result, the concentration of hydrogen trapped by the amorphous-related defects was found to be higher than that of hydrogen trapped by carbon-related defects with increasing temperature. The dissociation activation energy of trapped hydrogen at each type of defect was estimated using the consecutive reaction model. The dissociation energies at amorphous-related and carbon-related defects are 0.94 ± 0.22 and 0.67 ± 0.12 eV, respectively. The hydrogen trapped in the amorphous-related defects is considered to be in a bonding state with multivacancies, such as H<sub>2</sub>–V<sub>6</sub>. On the other hand, its bonding state in the carbon-related defects is assumed to be C–H<sub>2</sub> in carbon and self-interstitial silicon (C<sub>s</sub>–I) clusters and H<sub>2</sub>–V in tetrahedral (<i>T</i><sub>d</sub>) sites. Therefore, a high gettering capability of hydrogen can be expected by forming the amorphous-related defects peculiar to the high-dose implantation conditions.</p>"}],"abstractLicenseFlag":"allow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410574655178725761","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Kadono Takeshi"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation"},{"@language":"en","@value":"Faculity of Engineering, University of Miyazaki"}]},{"@id":"https://cir.nii.ac.jp/crid/1410574655178725765","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Okuyama Ryosuke"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410574655178725767","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Hirose Ryo"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410574655178725766","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Kobayashi Koji"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410574655178725769","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Onaka-Masada Ayumi"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410574655178725760","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Shigematsu Satoshi"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410574655178725768","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Koga Yoshihiro"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410574655178725762","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Okuda Hidehiko"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1410574655178725763","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Fukuyama Atsuhiko"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Faculity of Engineering, University of Miyazaki"}]},{"@id":"https://cir.nii.ac.jp/crid/1410574655178725764","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Kurita Kazunari"}],"jpcoar:affiliationName":[{"@language":"en","@value":"SUMCO Corporation"}]}],"publication":{"publicationIdentifier":[{"@type":"EISSN","@value":"13480391"}],"prism:publicationName":[{"@language":"en","@value":"e-Journal of Surface Science and Nanotechnology"},{"@language":"en","@value":"e-J. Surf. Sci. Nanotechnol."},{"@language":"en","@value":"e-J. Surf. Sci. Nanotech."},{"@language":"en","@value":"e-J. Surf. Sci. Nanotechnol"},{"@language":"en","@value":"e-J. Surf. Sci. Nanotech"},{"@language":"en","@value":"eJSSNT"},{"@language":"en","@value":"e-JSSNT"}],"dc:publisher":[{"@language":"en","@value":"The Japan Society of Vacuum and Surface Science"},{"@language":"ja","@value":"公益社団法人 日本表面真空学会"}],"prism:publicationDate":"2022-06-30","prism:volume":"20","prism:number":"3","prism:startingPage":"167","prism:endingPage":"173"},"reviewed":"false","dcterms:accessRights":"http://purl.org/coar/access_right/c_abf2","jpcoar:conferenceName":"The 9th International Symposium on Surface Science","jpcoar:conferencePlace":"Online","url":[{"@id":"https://www.jstage.jst.go.jp/article/ejssnt/20/3/20_2022-029/_pdf"}],"availableAt":"2022-06-30","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=%3Ci%3EHydrocarbon%20molecular%20ion%3C/i%3E","dc:title":"<i>Hydrocarbon molecular ion</i>"},{"@id":"https://cir.nii.ac.jp/all?q=%3Ci%3EHydrogen%3C/i%3E","dc:title":"<i>Hydrogen</i>"},{"@id":"https://cir.nii.ac.jp/all?q=%3Ci%3ERapid%20thermal%20annealing%3C/i%3E","dc:title":"<i>Rapid thermal annealing</i>"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449890913664","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449891434112","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360011145279900800","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Cluster Ion Implantation System: Claris for Beyond 45nm Device Fabrication (Ii)"}]},{"@id":"https://cir.nii.ac.jp/crid/1360011145818866048","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"ESR centers, interface states, and oxide fixed charge 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