{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390575661591959808.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.11470/jsapmeeting.2017.1.0_3610"}}],"dc:title":[{"@language":"en","@value":"Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2) - Hydrogen Passivation Effect of Room Temperature Bonding Wafer -"},{"@language":"ja","@value":"炭素クラスターイオン注入Siエピウェーハの特徴(2) ー 常温接合プロセスにおける水素のパッシベーション効果 ―"}],"dc:language":"ja","creator":[{"@id":"https://cir.nii.ac.jp/crid/1410575661591959809","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Kurita Kazunari"},{"@language":"ja","@value":"栗田 一成"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"株式会社　SUMCO"},{"@language":"en","@value":"SUMCO CORPORATION"}]},{"@id":"https://cir.nii.ac.jp/crid/1410575661591959808","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Koga Yoshihiro"},{"@language":"ja","@value":"古賀 祥泰"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"株式会社　SUMCO"},{"@language":"en","@value":"SUMCO CORPORATION"}]}],"publication":{"publicationIdentifier":[{"@type":"EISSN","@value":"24367613"}],"prism:publicationName":[{"@language":"en","@value":"JSAP Annual Meetings Extended Abstracts"},{"@language":"ja","@value":"応用物理学会学術講演会講演予稿集"}],"dc:publisher":[{"@language":"en","@value":"The Japan Society of Applied Physics"},{"@language":"ja","@value":"公益社団法人 応用物理学会"}],"prism:publicationDate":"2017-03-01","prism:volume":"2017.1","prism:number":"0","prism:startingPage":"3610","prism:endingPage":"3610"},"jpcoar:conferenceName":"応用物理学会春季学術講演会","jpcoar:conferencePlace":"パシフィコ横浜","availableAt":"2017-03-01","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=15a-F201-2","dc:title":"15a-F201-2"},{"@id":"https://cir.nii.ac.jp/all?q=epitaxial%20silicon%20wafer","dc:title":"epitaxial silicon wafer"},{"@id":"https://cir.nii.ac.jp/all?q=room%20templature%20bonding","dc:title":"room templature bonding"},{"@id":"https://cir.nii.ac.jp/all?q=passivation","dc:title":"passivation"},{"@id":"https://cir.nii.ac.jp/all?q=15a-F201-2","dc:title":"15a-F201-2"},{"@id":"https://cir.nii.ac.jp/all?q=%E7%B5%90%E6%99%B6%E5%B7%A5%E5%AD%A6","dc:title":"結晶工学"},{"@id":"https://cir.nii.ac.jp/all?q=%E7%B5%90%E6%99%B6%E8%A9%95%E4%BE%A1%EF%BC%8C%E4%B8%8D%E7%B4%94%E7%89%A9%E3%83%BB%E7%B5%90%E6%99%B6%E6%AC%A0%E9%99%A5","dc:title":"結晶評価，不純物・結晶欠陥"},{"@id":"https://cir.nii.ac.jp/all?q=%E3%83%91%E3%83%83%E3%82%B7%E3%81%B9%E3%83%BC%E3%82%B7%E3%83%A7%E3%83%B3%E5%8A%B9%E6%9E%9C","dc:title":"パッシべーション効果"},{"@id":"https://cir.nii.ac.jp/all?q=%E3%82%A8%E3%83%94%E3%82%BF%E3%82%AD%E3%82%B7%E3%83%A3%E3%83%AB%E3%82%B7%E3%83%AA%E3%82%B3%E3%83%B3%E3%82%A6%E3%82%A7%E3%83%BC%E3%83%8F","dc:title":"エピタキシャルシリコンウェーハ"},{"@id":"https://cir.nii.ac.jp/all?q=%E5%B8%B8%E6%B8%A9%E6%8E%A5%E5%90%88%E8%B2%BC%E3%82%8A%E5%90%88%E3%82%8F%E3%81%9B","dc:title":"常温接合貼り合わせ"},{"@id":"https://cir.nii.ac.jp/all?q=%E3%83%91%E3%83%83%E3%82%B7%E3%83%99%E3%83%BC%E3%82%B7%E3%83%A7%E3%83%B3","dc:title":"パッシベーション"}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:2009981960"}]}