Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2) -Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature (2)-

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  • 炭素クラスターイオン注入Siエピウェーハの特徴(2) ー 常温接合界面における酸素の捕獲能力(2) ―

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