STM/STS observation of Nb-doped WSe<sub>2</sub> atomic layer
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- Sato Tomohiro
- Graduate School of Science and Technology, University of Tsukuba
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- Huzi Naoki
- Graduate School of Science and Technology, University of Tsukuba
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- Murai Yuya
- Graduate School of Science, Nagoya University
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- Yoshida Syozi
- Graduate School of Science and Technology, University of Tsukuba
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- Mogi Hiroyuki
- Graduate School of Science and Technology, University of Tsukuba
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- Kitaura Ryo
- Graduate School of Science, Nagoya University
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- Miyata Yasumitsu
- Graduate School of Science, Tokyo Metropolitan University
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- Takeuchi Osamu
- Graduate School of Science and Technology, University of Tsukuba
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- Shigekawa Hidemi
- Graduate School of Science and Technology, University of Tsukuba
Bibliographic Information
- Other Title
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- NbをドープしたWSe<sub>2</sub>原子層のSTM/STS観察
Description
<p>Recently, transition metal dichalcogenide monolayers (TMDC) such as MoS2 or WSe2 have attracted much attention due to their superior semiconducting properties, and realization of atomically thin electrical device based on TMDC has been strongly desired.</p><p></p><p>In this study, we have investigated atomic and electronic structure of Nb doped WSe2 samples made by STM/STS. The Samples were prepared by two different growth condition. We evaluated the charge state of individual Nb dopant in WSe2 by measuring dI/dV spectra.</p>
Journal
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- Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science
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Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science 2020 (0), 110-, 2020
The Japan Society of Vacuum and Surface Science
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Details 詳細情報について
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- CRID
- 1390849931315368320
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- NII Article ID
- 130007959277
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- ISSN
- 24348589
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles
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- Abstract License Flag
- Disallowed