Precursor selection for metal–organic chemical vapor deposition of SrHfO<sub>3</sub> films with Sr(dpm)<sub>2</sub> and Sr(hfa)<sub>2</sub>

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  • FUJIE Sayaka
    Graduate School of Environment and Information Sciences, Yokohama National University
  • ITO Akihiko
    Graduate School of Environment and Information Sciences, Yokohama National University

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<p>SrHfO3 films were prepared using metal–organic chemical vapor deposition (MOCVD) with hafnium tetrakis(acetylacetonate) and two different Sr precursors, and the effects of Sr content in the vapor and deposition temperature on crystal phase and microstructure were investigated. With the strontium bis(dipivaloylmethanate) [Sr(dpm)2] precursor, low Sr content of the deposited films regardless of Sr supply ratio resulted in no detectable SrHfO3 formation. With the strontium bis(hexafluoroacetylacetonate) [Sr(hfa)2] precursor, along with linear increase of Sr content in the deposited films, the primary crystal phase of the film changed from monoclinic HfO2 to orthorhombic SrHfO3 to SrCO3. A single-phase orthorhombic SrHfO3 film was prepared with the Sr(hfa)2 precursor at 1373 K and 42 mol %Sr (corresponding to 50 mol %Sr in the film).</p>

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