{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390856152137988608.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.11470/jsapmeeting.2019.1.0_1274"}}],"dc:title":[{"@language":"en","@value":"A Study of SOI Wafer with SiC-BOX Layer using Room-Temperature Bonding"},{"@language":"ja","@value":"常温接合によるSiC-BOX層SOIウェーハの検討"}],"dc:language":"ja","creator":[{"@id":"https://cir.nii.ac.jp/crid/1410856152137988608","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Koga Yoshihiro"},{"@language":"ja","@value":"古賀 祥泰"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"株式会社　ＳＵＭＣＯ"},{"@language":"en","@value":"SUMCO CORPORATION"}]},{"@id":"https://cir.nii.ac.jp/crid/1410856152137988609","@type":"Researcher","foaf:name":[{"@language":"en","@value":"Kurita Kazunari"},{"@language":"ja","@value":"栗田 一成"}],"jpcoar:affiliationName":[{"@language":"ja","@value":"株式会社　ＳＵＭＣＯ"},{"@language":"en","@value":"SUMCO CORPORATION"}]}],"publication":{"publicationIdentifier":[{"@type":"EISSN","@value":"24367613"}],"prism:publicationName":[{"@language":"en","@value":"JSAP Annual Meetings Extended Abstracts"},{"@language":"ja","@value":"応用物理学会学術講演会講演予稿集"}],"dc:publisher":[{"@language":"en","@value":"The Japan Society of Applied Physics"},{"@language":"ja","@value":"公益社団法人 応用物理学会"}],"prism:publicationDate":"2019-02-25","prism:volume":"2019.1","prism:number":"0","prism:startingPage":"1274","prism:endingPage":"1274"},"jpcoar:conferenceName":"応用物理学会春季学術講演会","jpcoar:conferencePlace":"東京工業大学 大岡山キャンパス","availableAt":"2019-02-25","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=10a-M113-1","dc:title":"10a-M113-1"},{"@id":"https://cir.nii.ac.jp/all?q=SOI%20wafer","dc:title":"SOI wafer"},{"@id":"https://cir.nii.ac.jp/all?q=SiC","dc:title":"SiC"},{"@id":"https://cir.nii.ac.jp/all?q=Room-temprature%20bonding","dc:title":"Room-temprature bonding"},{"@id":"https://cir.nii.ac.jp/all?q=10a-M113-1","dc:title":"10a-M113-1"},{"@id":"https://cir.nii.ac.jp/all?q=%E8%96%84%E8%86%9C%E3%83%BB%E8%A1%A8%E9%9D%A2","dc:title":"薄膜・表面"},{"@id":"https://cir.nii.ac.jp/all?q=%E3%82%AB%E3%83%BC%E3%83%9C%E3%83%B3%E7%B3%BB%E8%96%84%E8%86%9C","dc:title":"カーボン系薄膜"},{"@id":"https://cir.nii.ac.jp/all?q=%E9%9D%9E%E6%99%B6%E8%B3%AA%E3%82%AB%E3%83%BC%E3%83%9C%E3%83%B3%E8%96%84%E8%86%9C","dc:title":"非晶質カーボン薄膜"},{"@id":"https://cir.nii.ac.jp/all?q=SOI%E3%82%A6%E3%82%A7%E3%83%BC%E3%83%8F","dc:title":"SOIウェーハ"},{"@id":"https://cir.nii.ac.jp/all?q=%E7%82%AD%E5%8C%96%E7%8F%AA%E7%B4%A0","dc:title":"炭化珪素"},{"@id":"https://cir.nii.ac.jp/all?q=%E5%B8%B8%E6%B8%A9%E6%8E%A5%E5%90%88%E8%B2%BC%E3%82%8A%E5%90%88%E3%82%8F%E3%81%9B","dc:title":"常温接合貼り合わせ"}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:2009844885"}]}