Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5) -Carbon cluster ion implantation-related defect formation analyzed by X-ray photoelectron spectroscopy-

Bibliographic Information

Other Title
  • 炭素クラスターイオン注入Siエピウェーハの特徴(5) -X線光電子分光法による注入欠陥形成の解析-
Published
2017-03-01
DOI
  • 10.11470/jsapmeeting.2017.1.0_3613
Publisher
The Japan Society of Applied Physics

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