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Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3) - Analysis of annealing behavior of implantation induced defects in the projection range using Atom Probe Tomography -
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- Shigematsu Satoshi
- SUMCO
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- Okuyama Ryosuke
- SUMCO
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- Hirose Ryo
- SUMCO
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- Masada Ayumi
- SUMCO
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- Kadono Takeshi
- SUMCO
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- Koga Yoshihiro
- SUMCO
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- Okuda Hidehiko
- SUMCO
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- Kurita Kazunari
- SUMCO
Bibliographic Information
- Other Title
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- 炭素クラスターイオン注入Siエピウェーハの特徴 (3) -注入層における注入欠陥の3次元アトムプローブによる解析-
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2017.1 (0), 3611-3611, 2017-03-01
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390857136568758016
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC